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Title: Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N

Abstract

Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructruralmore » investigations.« less

Authors:
; ; ; ; ; ;  [1]
  1. Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil (France)
Publication Date:
OSTI Identifier:
22053722
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Volume: 28; Journal Issue: 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTRIC CONDUCTIVITY; GRAIN SIZE; MAGNETRONS; PLASMA; PRESSURE RANGE GIGA PA; REFLECTIVITY; SCANNING ELECTRON MICROSCOPY; SOLID SOLUTIONS; TANTALUM; TANTALUM NITRIDES; THIN FILMS; TITANIUM; TITANIUM NITRIDES; X-RAY DIFFRACTION; ZIRCONIUM; ZIRCONIUM NITRIDES

Citation Formats

Abadias, G, Koutsokeras, L E, Dub, S N, Tolmachova, G N, Debelle, A, Sauvage, T, Villechaise, P, Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil, France and Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110, Institute for Superhard Materials, NAS of Ukraine, Avtozavodskaya St. 2, 04074 Kiev, Kharkov Institute of Physics and Technology, Akademicheskaya St., 61108 Kharkov, Universite Paris-Sud 11, CSNSM, Ba circumflex t 108, 91405 Orsay Cedex, CNRS-CEMHTI, Site Cyclotron, 3A, rue de la Ferollerie, 45071 Orleans Cedex 2, and Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N. United States: N. p., 2010. Web. doi:10.1116/1.3426296.
Abadias, G, Koutsokeras, L E, Dub, S N, Tolmachova, G N, Debelle, A, Sauvage, T, Villechaise, P, Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil, France and Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110, Institute for Superhard Materials, NAS of Ukraine, Avtozavodskaya St. 2, 04074 Kiev, Kharkov Institute of Physics and Technology, Akademicheskaya St., 61108 Kharkov, Universite Paris-Sud 11, CSNSM, Ba circumflex t 108, 91405 Orsay Cedex, CNRS-CEMHTI, Site Cyclotron, 3A, rue de la Ferollerie, 45071 Orleans Cedex 2, & Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil. Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N. United States. https://doi.org/10.1116/1.3426296
Abadias, G, Koutsokeras, L E, Dub, S N, Tolmachova, G N, Debelle, A, Sauvage, T, Villechaise, P, Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil, France and Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110, Institute for Superhard Materials, NAS of Ukraine, Avtozavodskaya St. 2, 04074 Kiev, Kharkov Institute of Physics and Technology, Akademicheskaya St., 61108 Kharkov, Universite Paris-Sud 11, CSNSM, Ba circumflex t 108, 91405 Orsay Cedex, CNRS-CEMHTI, Site Cyclotron, 3A, rue de la Ferollerie, 45071 Orleans Cedex 2, and Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil. 2010. "Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N". United States. https://doi.org/10.1116/1.3426296.
@article{osti_22053722,
title = {Reactive magnetron cosputtering of hard and conductive ternary nitride thin films: Ti-Zr-N and Ti-Ta-N},
author = {Abadias, G and Koutsokeras, L E and Dub, S N and Tolmachova, G N and Debelle, A and Sauvage, T and Villechaise, P and Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil, France and Department of Materials Science and Engineering, University of Ioannina, Ioannina 45110 and Institute for Superhard Materials, NAS of Ukraine, Avtozavodskaya St. 2, 04074 Kiev and Kharkov Institute of Physics and Technology, Akademicheskaya St., 61108 Kharkov and Universite Paris-Sud 11, CSNSM, Ba circumflex t 108, 91405 Orsay Cedex and CNRS-CEMHTI, Site Cyclotron, 3A, rue de la Ferollerie, 45071 Orleans Cedex 2 and Departement Physique et Mecanique des Materiaux, Institut Pprime, UPR 3346, CNRS, Universite de Poitiers, ENSMA, SP2MI--Teleport 2, Bd Marie et Pierre Curie, BP 30179, F86962 Futuroscope-Chasseneuil},
abstractNote = {Ternary transition metal nitride thin films, with thickness up to 300 nm, were deposited by dc reactive magnetron cosputtering in Ar-N{sub 2} plasma discharges at 300 deg. C on Si substrates. Two systems were comparatively studied, Ti-Zr-N and Ti-Ta-N, as representative of isostructural and nonisostructural prototypes, with the aim of characterizing their structural, mechanical, and electrical properties. While phase-separated TiN-ZrN and TiN-TaN are the bulk equilibrium states, Ti{sub 1-x}Zr{sub x}N and Ti{sub 1-y}Ta{sub y}N solid solutions with the Na-Cl (B1-type) structure could be stabilized in a large compositional range (up to x=1 and y=0.75, respectively). Substituting Ti atoms by either Zr or Ta atoms led to significant changes in film texture, microstructure, grain size, and surface morphology, as evidenced by x-ray diffraction, x-ray reflectivity, and scanning electron and atomic force microscopies. The ternary Ti{sub 1-y}Ta{sub y}N films exhibited superior mechanical properties to Ti{sub 1-x}Zr{sub x}N films as well as binary compounds, with hardness as high as 42 GPa for y=0.69. All films were metallic, the lowest electrical resistivity {rho}{approx}65 {mu}{Omega} cm being obtained for pure ZrN, while for Ti{sub 1-y}Ta{sub y}N films a minimum was observed at y{approx}0.3. The evolution of the different film properties is discussed based on microstructrural investigations.},
doi = {10.1116/1.3426296},
url = {https://www.osti.gov/biblio/22053722}, journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
issn = {1553-1813},
number = 4,
volume = 28,
place = {United States},
year = {2010},
month = {7}
}