Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate
- Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
Initial growth stage evaluation of high quality ZnSe films deposited on a glass substrate was investigated. The self-limiting monolayer epitaxial process was used to pregrowth the buffer layer for a zinc selenide (ZnSe) film deposited. After alternating depositions for several cycles, the growth mode was changed to the molecular beam deposition mode under growth conditions. Films deposited at substrate temperatures of 250-350 deg. C and Se/Zn beam equivalent pressure ratios of 0.77-1.87 were investigated. The crystal structure and the preferred orientation of as-grown ZnSe films were examined using x-ray diffraction patterns. The optical properties of the ZnSe films were revealed by photoluminescence spectra. The characteristics of the ZnSe films with and without a buffer layer were compared and discussed in detail. Finally, the results demonstrate how the quality of ZnSe film can be improved on glass substrates for application to various devices.
- OSTI ID:
- 22053685
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 3; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
Similar Records
Investigation of GaAs surface treatments for ZnSe growth by molecular beam epitaxy without a buffer layer
Room temperature deposition of ZnSe thin films by successive ionic layer adsorption and reaction (SILAR) method