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Title: Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma

Abstract

InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH{sub 4}/H{sub 2}/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), %CH{sub 4} in H{sub 2} (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degree sign , the etched surface is as smooth as before the RIE process.

Authors:
; ; ; ; ;  [1]
  1. Luoyang Opto-Electro Technology Development Center, P.O. Box 030, Luoyang 471009 (China)
Publication Date:
OSTI Identifier:
22053498
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
Additional Journal Information:
Journal Volume: 27; Journal Issue: 4; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1553-1813
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; ARGON; ETCHING; HYDROGEN; INDIUM ANTIMONIDES; IONS; METHANE; MORPHOLOGY; PARTIAL PRESSURE; PLASMA; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SPUTTERING; SURFACES

Citation Formats

Guodong, Zhang, Weiguo, Sun, Shuli, Xu, Hongyan, Zhao, Hongyi, Su, and Haizhen, Wang. Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma. United States: N. p., 2009. Web. doi:10.1116/1.3143664.
Guodong, Zhang, Weiguo, Sun, Shuli, Xu, Hongyan, Zhao, Hongyi, Su, & Haizhen, Wang. Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma. United States. https://doi.org/10.1116/1.3143664
Guodong, Zhang, Weiguo, Sun, Shuli, Xu, Hongyan, Zhao, Hongyi, Su, and Haizhen, Wang. 2009. "Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma". United States. https://doi.org/10.1116/1.3143664.
@article{osti_22053498,
title = {Inductively coupled plasma-reactive ion etching of InSb using CH{sub 4}/H{sub 2}/Ar plasma},
author = {Guodong, Zhang and Weiguo, Sun and Shuli, Xu and Hongyan, Zhao and Hongyi, Su and Haizhen, Wang},
abstractNote = {InSb is an important material for optoelectronic devices. Most InSb devices are currently wet etched, and the etching geometries are limited due to the isotropic nature of wet etching. Inductively coupled plasma (ICP)-reactive ion etching (RIE) is a more desirable alternative because it offers a means of producing small anisotropic structures especially needed in large format infrared focal plane arrays. This work describes the novel use of ICP-RIE for fabricating InSb mesas with CH{sub 4}/H{sub 2}/Ar plasma and presents the influences of the process parameters on the etch rate and surface morphology. The parameters investigated include bias radio frequency power (50-250 W), %CH{sub 4} in H{sub 2} (10-50), argon (Ar) partial pressure (0-0.3 Pa with total pressure of 1.0 Pa), and total pressure (0.35-4 Pa). With the process parameters optimized in this investigated ranges, good etching results have been achieved with etch rates up to 80 nm/min, and etch features with sidewall angles of about 80 degree sign , the etched surface is as smooth as before the RIE process.},
doi = {10.1116/1.3143664},
url = {https://www.osti.gov/biblio/22053498}, journal = {Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films},
issn = {1553-1813},
number = 4,
volume = 27,
place = {United States},
year = {Wed Jul 15 00:00:00 EDT 2009},
month = {Wed Jul 15 00:00:00 EDT 2009}
}