Amorphization of Si(100) by Ar{sup +}-ion bombardment studied with spectroscopic and time-resolved second-harmonic generation
- Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)
The surface and interface sensitive technique of optical second-harmonic generation (SHG) has been applied spectroscopically and time-resolved before, during, and after low energy (70-1000 eV) Ar{sup +}-ion bombardment of H-terminated Si(100). The photon energy range of the fundamental radiation was ({Dirac_h}/2{pi}){omega}=0.76-1.14 eV. Besides physical sputtering of the silicon, ion bombardment of crystalline silicon damages and amorphizes the top layer of the sample and thereby creates a layered structure of amorphous silicon (a-Si) on crystalline silicon. The SHG radiation, which is sensitive to the Ar{sup +}-ion flux, ion energy, and the presence of reactive gas species, originates from the top surface of the sample and from the interface between a-Si and c-Si. From a comparison with the SHG results obtained at a fundamental radiation of ({Dirac_h}/2{pi}){omega}=1.3-1.7 eV, it is concluded that the SHG radiation during and after creation of this structure dominantly originates from the tails of electronic transitions in the E{sub 0}{sup '}/E{sub 1} energy region rather than from silicon dangling bonds.
- OSTI ID:
- 22051145
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 2; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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