Study on MoO{sub 3-x} films deposited by reactive sputtering for organic light-emitting diodes
- Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558 (Japan)
The authors investigate the role of reduced molybdenum trioxide [MoO{sub 3-x} (x{<=}1)] films in organic light-emitting diodes, particularly from the viewpoint of the oxidation state of Mo. MoO{sub 3-x} films were deposited by reactive sputtering under a mixture of argon (Ar) and oxygen (O{sub 2}). The O{sub 2} gas-flow ratio (GFR) [O{sub 2}/(Ar+O{sub 2})] was adjusted between 10% and 100%. Mo with six, five, and four valence electrons was detected in MoO{sub 3-x} film deposited with an O{sub 2} GFR of 10% and 12.5%, whereas, under higher O{sub 2} GFRs, only six valence electrons for Mo in the MoO{sub 3-x} film were detected. N,N{sup '}-di(1-naphthyl)-N,N{sup '}-diphenylbenzidine ({alpha}-NPD) layer, hole-transport material, were deposited over the MoO{sub 3-x} layer by subsequent vacuum evaporation. At the {alpha}-NPD/MoO{sub 3-x} interface, it was found that {alpha}-NPD cations were generated and that MoO{sub 3-x} was reduced, which provided evidence of charge transfer across the interface by Raman spectroscopy and x-ray photoelectron spectroscopy.
- OSTI ID:
- 22051136
- Journal Information:
- Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 28, Issue 4; Other Information: (c) 2010 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARGON
CATIONS
ELECTRONS
GAS FLOW
HOLES
LIGHT EMITTING DIODES
MOLYBDENUM OXIDES
OXIDATION
OXYGEN
RAMAN SPECTROSCOPY
SPUTTERING
THIN FILMS
VACUUM COATING
VACUUM EVAPORATION
X-RAY PHOTOELECTRON SPECTROSCOPY