Capillary jet injection of SiH{sub 4} in the high density plasma chemical vapor deposition of SiO{sub 2}

Journal Article · Wed Jul 15 00:00:00 EDT 2009 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.3153283· OSTI ID:22051004

Botha, R; Novikova, T; Bulkin, P ^[1]

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1. LPICM, Ecole Polytechnique, 91128 Palaiseau (France)

In this article, the authors compare the thickness profiles and OH content of SiO{sub 2} films deposited using capillary jet injection of silane in a high density plasma chemical vapor deposition (HDP CVD) system with the results of phenomenological modeling using direct simulation Monte Carlo (DSMC) gas flow calculations. A tube with an internal diameter of 1 mm is located vertically at 3 cm in front of the substrate surface and is used for the injection of the silane. The deposition plasma is characterized using optical emission spectroscopy (OES) and differentially pumped quadrupole mass spectrometry (QMS). Studying the thickness-normalized OH absorption in the deposited film at various points on the substrate, the authors gain insight into the contribution of the water flux to the OH content in the deposited SiO{sub 2} film. Gas flow simulations using the DSMC technique are used to study the fluxes of the species onto the substrate plane. From the results the authors conclude that (i) the flux of the H{sub 2}O onto the substrate holder is uniform, while the SiH{sub 4} flux varies considerably along the substrate holder, which leads to a lower level of hydroxyl incorporated into the deposited film in regions of high deposition rate; (ii) HDP CVD systems cannot be considered as well mixed when using SiH{sub 4} because its reaction products have high sticking coefficients and the ground-state molecules have the possibility to be consumed on the surface through reactions with oxygen radicals and ions when depositing SiO{sub 2}; (iii) the primary beamlike flux of undissociated SiH{sub 4} onto the substrate surface has an important influence on the film's deposition rate; and (iv) the SiH{sub 4} reactive sticking coefficient is estimated to be between 0.01 and 0.03.

• OSTI ID: 22051004
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Vol. 27, Issue 4; Other Information: (c) 2009 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CAPILLARIES
CHEMICAL VAPOR DEPOSITION
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
CRYSTAL GROWTH
EMISSION SPECTROSCOPY
GAS FLOW
GROUND STATES
HYDROXIDES
MASS SPECTROSCOPY
MOLECULES
MONTE CARLO METHOD
OXYGEN
PLASMA
PLASMA DENSITY
RADICALS
SILANES
SILICON OXIDES
SUBSTRATES
THIN FILMS