skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Test system for charge collection efficiency measurement (SYCOC) for neutron irradiated silicon sensors

Conference ·
; ; ; ; ; ;  [1]
  1. Universite Catholique de Louvain, Louvain-la-Neuve (Belgium)

One of the constraints in using standard Float Zone silicon layer as base material for tracking in particle physics is its radiation hardness. The detection efficiency is degraded by the introduction of defects in the silicon crystal and charge trapping becomes the main problem. The Charge Collection Efficiency (CCE) is a relevant parameter in order to determine the detection performance of such devices. A state-of-the-art test system named 'Systeme de mesure de collection de charge' (SYCOC) has been developed for the characterization of diode and microstrip silicon sensors before and after irradiation. The system is designed to perform Charge Collection Efficiency (CCE) and Transient Current Technique (TCT) measurements with laser and radioactive sources in a controlled environment. Initial measurements on diodes are presented. (authors)

OSTI ID:
22039918
Resource Relation:
Conference: ANIMMA 2011: 2. International Conference on Advancements in Nuclear Instrumentation, Measurement Methods and their Applications, Ghent (Belgium), 6-9 Jun 2011; Other Information: Country of input: France; 4 refs.; IEEE Catalog Number: CFP1124I-CDR
Country of Publication:
United States
Language:
English

Similar Records

Effects of trapped charge on the signal formation and detection efficiency for subsequent pulses in irradiated silicon sensors
Journal Article · Thu Jul 23 00:00:00 EDT 2020 · Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment · OSTI ID:22039918

Charge collection and electrical characterization of neutron irradiated silicon pad detectors for the CMS High Granularity Calorimeter
Journal Article · Tue Sep 22 00:00:00 EDT 2020 · Journal of Instrumentation · OSTI ID:22039918

Charge collection efficiency degradation induced by MeV ions in semiconductor devices: Model and experiment
Journal Article · Mon Feb 08 00:00:00 EST 2016 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms · OSTI ID:22039918