Influence of defect formation as a result of incorporation of a Mn {delta} layer on the photosensitiviy spectrum of InGaAs/GaAs quantum wells
- Lobachevsky State University of Nizhny Novgorod (Russian Federation)
The influence of defect formation upon the deposition of a Mn {delta} layer and a GaAs coating layer (with the use of laser evaporation) on the photosensitivity spectra of heterostructures with InGaAs/GaAs quantum wells located in the near-surface region has been studied.
- OSTI ID:
- 22039041
- Journal Information:
- Semiconductors, Vol. 46, Issue 2; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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