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Title: Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type

Abstract

Effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n-Si grown by the floating zone (FZ) technique and n-SiC (4H) grown by chemical vapor deposition are studied in a comparative way. It has been established that the dominant radiation-produced defects with involvement of V group impurities differ dramatically in electron- and proton-irradiated n-Si (FZ), in spite of the opinion on their similarity widespread in literature. This dissimilarity in defect structures is attributed to a marked difference in distributions of primary radiation defects for the both kinds of irradiation. In contrast, DLTS spectra taken on electron- and proton-irradiated n-SiC (4H) appear to be similar. However, there are very much pronounced differences in the formation rates of radiation-produced defects. Despite a larger production rate of Frenkel pairs in SiC as compared to that in Si, the removal rates of charge carriers in n-SiC (4H) were found to be considerably smaller than those in n-Si (FZ) for the both electron and proton irradiation. Comparison between defect production rates in the both materials under electron and proton irradiation is drawn.

Authors:
;  [1];  [2]; ; ;  [1];  [3]
  1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  2. St. Petersburg State Polytechnic University (Russian Federation)
  3. Leibniz-Institute for Crystal Growth (Germany)
Publication Date:
OSTI Identifier:
22039002
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 46; Journal Issue: 4; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; DEFECTS; DISTRIBUTION; DOPED MATERIALS; ELECTRONS; IMPURITIES; IRRADIATION; PROTONS; SILICON; SILICON CARBIDES; SPECTRA

Citation Formats

Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru, Ivanov, A. M., Kozlovski, V. V., Lebedev, A. A., Oganesyan, G. A., Strokan, N. B., and Wagner, G. Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type. United States: N. p., 2012. Web. doi:10.1134/S1063782612040069.
Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru, Ivanov, A. M., Kozlovski, V. V., Lebedev, A. A., Oganesyan, G. A., Strokan, N. B., & Wagner, G. Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type. United States. doi:10.1134/S1063782612040069.
Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru, Ivanov, A. M., Kozlovski, V. V., Lebedev, A. A., Oganesyan, G. A., Strokan, N. B., and Wagner, G. Sun . "Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type". United States. doi:10.1134/S1063782612040069.
@article{osti_22039002,
title = {Similarities and distinctions of defect production by fast electron and proton irradiation: Moderately doped silicon and silicon carbide of n-type},
author = {Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru and Ivanov, A. M. and Kozlovski, V. V. and Lebedev, A. A. and Oganesyan, G. A. and Strokan, N. B. and Wagner, G.},
abstractNote = {Effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n-Si grown by the floating zone (FZ) technique and n-SiC (4H) grown by chemical vapor deposition are studied in a comparative way. It has been established that the dominant radiation-produced defects with involvement of V group impurities differ dramatically in electron- and proton-irradiated n-Si (FZ), in spite of the opinion on their similarity widespread in literature. This dissimilarity in defect structures is attributed to a marked difference in distributions of primary radiation defects for the both kinds of irradiation. In contrast, DLTS spectra taken on electron- and proton-irradiated n-SiC (4H) appear to be similar. However, there are very much pronounced differences in the formation rates of radiation-produced defects. Despite a larger production rate of Frenkel pairs in SiC as compared to that in Si, the removal rates of charge carriers in n-SiC (4H) were found to be considerably smaller than those in n-Si (FZ) for the both electron and proton irradiation. Comparison between defect production rates in the both materials under electron and proton irradiation is drawn.},
doi = {10.1134/S1063782612040069},
journal = {Semiconductors},
issn = {1063-7826},
number = 4,
volume = 46,
place = {United States},
year = {2012},
month = {4}
}