Comparative study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers
- National Kaohsiung Normal University, Department of Electronic Engineering, Taiwan (China)
- Air Force Academy, Kaohsiung, Department of Electronic Engineering, Taiwan (China)
- National Taiwan Ocean University, Department of Electrical Engineering, Taiwan (China)
Influence corresponding to the position of {delta}-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the device with lower {delta}-doped supplied layer shows a higher gate potential barrier height, a higher saturation output current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the device with upper {delta}-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency characteristics in the device with lower {delta}-doped supplied layer. Furthermore, a knee effect in current-voltage curves is observed at low drain-to-source voltage in the two devices, which is investigated in this article.
- OSTI ID:
- 22038995
- Journal Information:
- Semiconductors, Vol. 46, Issue 4; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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