Phase transitions in thin Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide films according to Raman spectroscopy data
- Ryazan State Radio Engineering University (Russian Federation)
- Russian Academy of Sciences, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Data on the Raman spectra of thin Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide semiconductor films are reported. The study is performed with the purpose of determining the temperatures of phase transitions initiated by laser radiation.
- OSTI ID:
- 22038989
- Journal Information:
- Semiconductors, Vol. 46, Issue 5; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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