Thermal expansion of CuIn{sub 5}S{sub 8} single crystals and the temperature dependence of their band gap
Abstract
Single crystals of the CuIn{sub 5}S{sub 8} ternary compound are grown by planar crystallization of the melt (the vertical Bridgman method). The composition and structure of the crystals are established. The specific expansion is measured by the dilatometric technique, and the coefficients of thermal expansion are calculated. From the data, the Debye temperatures ({Theta}{sub D}) and the root-mean-square dynamic displacements of atoms ({radical}(u-bar{sup 2})) in the CuIn{sub 5}S{sub 8} compound are calculated. From the transmittance spectra recorded in the region of the fundamental absorption edge in the temperature range 20 to 300 K, the band gap is determined and its temperature dependence is constructed.
- Authors:
- Belarussian State University of Information and Radio Electronics (Belarus)
- Publication Date:
- OSTI Identifier:
- 22038986
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 46; Journal Issue: 5; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ABSORPTION; BRIDGMAN METHOD; COLOR; COLOR MODEL; DEBYE TEMPERATURE; MONOCRYSTALS; SPECTRA; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THERMAL EXPANSION
Citation Formats
Bodnar, I. V., E-mail: chemzav@bsuir.by. Thermal expansion of CuIn{sub 5}S{sub 8} single crystals and the temperature dependence of their band gap. United States: N. p., 2012.
Web. doi:10.1134/S1063782612050089.
Bodnar, I. V., E-mail: chemzav@bsuir.by. Thermal expansion of CuIn{sub 5}S{sub 8} single crystals and the temperature dependence of their band gap. United States. https://doi.org/10.1134/S1063782612050089
Bodnar, I. V., E-mail: chemzav@bsuir.by. 2012.
"Thermal expansion of CuIn{sub 5}S{sub 8} single crystals and the temperature dependence of their band gap". United States. https://doi.org/10.1134/S1063782612050089.
@article{osti_22038986,
title = {Thermal expansion of CuIn{sub 5}S{sub 8} single crystals and the temperature dependence of their band gap},
author = {Bodnar, I. V., E-mail: chemzav@bsuir.by},
abstractNote = {Single crystals of the CuIn{sub 5}S{sub 8} ternary compound are grown by planar crystallization of the melt (the vertical Bridgman method). The composition and structure of the crystals are established. The specific expansion is measured by the dilatometric technique, and the coefficients of thermal expansion are calculated. From the data, the Debye temperatures ({Theta}{sub D}) and the root-mean-square dynamic displacements of atoms ({radical}(u-bar{sup 2})) in the CuIn{sub 5}S{sub 8} compound are calculated. From the transmittance spectra recorded in the region of the fundamental absorption edge in the temperature range 20 to 300 K, the band gap is determined and its temperature dependence is constructed.},
doi = {10.1134/S1063782612050089},
url = {https://www.osti.gov/biblio/22038986},
journal = {Semiconductors},
issn = {1063-7826},
number = 5,
volume = 46,
place = {United States},
year = {Tue May 15 00:00:00 EDT 2012},
month = {Tue May 15 00:00:00 EDT 2012}
}
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