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Title: Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

Abstract

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

Authors:
; ; ; ; ; ;  [1]; ;  [2];  [3]
  1. Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linkoeping University, SE-581 83 Linkoeping (Sweden)
  2. Ceramics Laboratory, Ecole Polytechnique Federale de Lausanne EPFL, Lausanne (Switzerland)
  3. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Publication Date:
OSTI Identifier:
22038951
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 111; Journal Issue: 9; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL METHOD; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; EPITAXY; INTERFEROMETRY; LAYERS; LEAKAGE CURRENT; MICROSTRUCTURE; PIEZOELECTRICITY; SCANDIUM NITRIDES; SPUTTERING; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY

Citation Formats

Zukauskaite, Agne, Wingqvist, Gunilla, Palisaitis, Justinas, Jensen, Jens, Persson, Per O. A., Birch, Jens, Hultman, Lars, Matloub, Ramin, Muralt, Paul, and Kim, Yunseok. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films. United States: N. p., 2012. Web. doi:10.1063/1.4714220.
Zukauskaite, Agne, Wingqvist, Gunilla, Palisaitis, Justinas, Jensen, Jens, Persson, Per O. A., Birch, Jens, Hultman, Lars, Matloub, Ramin, Muralt, Paul, & Kim, Yunseok. Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films. United States. doi:10.1063/1.4714220.
Zukauskaite, Agne, Wingqvist, Gunilla, Palisaitis, Justinas, Jensen, Jens, Persson, Per O. A., Birch, Jens, Hultman, Lars, Matloub, Ramin, Muralt, Paul, and Kim, Yunseok. Tue . "Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films". United States. doi:10.1063/1.4714220.
@article{osti_22038951,
title = {Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films},
author = {Zukauskaite, Agne and Wingqvist, Gunilla and Palisaitis, Justinas and Jensen, Jens and Persson, Per O. A. and Birch, Jens and Hultman, Lars and Matloub, Ramin and Muralt, Paul and Kim, Yunseok},
abstractNote = {Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.},
doi = {10.1063/1.4714220},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 111,
place = {United States},
year = {2012},
month = {5}
}