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Title: Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition

Abstract

We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO{sub 2} substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 {mu}C/cm{sup 2}) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.

Authors:
; ; ; ;  [1]
  1. Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22038940
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 111; Journal Issue: 8; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; AMORPHOUS STATE; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; CRYSTALS; ELECTRON BEAMS; ENERGY BEAM DEPOSITION; GRAPHITE; IRRADIATION; LAYERS; NANOSTRUCTURES; PLASMA; RADIATION DOSES; RADIATION EFFECTS; RAMAN SPECTRA; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; STRAINS; SUBSTRATES

Citation Formats

Iqbal, M Z, Kumar Singh, Arun, Iqbal, M W, Seo, Sunae, and Eom, Jonghwa. Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition. United States: N. p., 2012. Web. doi:10.1063/1.4704197.
Iqbal, M Z, Kumar Singh, Arun, Iqbal, M W, Seo, Sunae, & Eom, Jonghwa. Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition. United States. https://doi.org/10.1063/1.4704197
Iqbal, M Z, Kumar Singh, Arun, Iqbal, M W, Seo, Sunae, and Eom, Jonghwa. Sun . "Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition". United States. https://doi.org/10.1063/1.4704197.
@article{osti_22038940,
title = {Effect of e-beam irradiation on graphene layer grown by chemical vapor deposition},
author = {Iqbal, M Z and Kumar Singh, Arun and Iqbal, M W and Seo, Sunae and Eom, Jonghwa},
abstractNote = {We have grown graphene by chemical vapor deposition (CVD) and transferred it onto Si/SiO{sub 2} substrates to make tens of micron scale devices for Raman spectroscopy study. The effect of electron beam (e-beam) irradiation of various doses (600 to 12 000 {mu}C/cm{sup 2}) on CVD grown graphene has been examined by using Raman spectroscopy. It is found that the radiation exposures result in the appearance of the strong disorder D band attributed the damage to the lattice. The evolution of peak frequencies, intensities, and widths of the main Raman bands of CVD graphene is analyzed as a function of defect created by e-beam irradiation. Especially, the D and G peak evolution with increasing radiation dose follows the amorphization trajectory, which suggests transformation of graphene to the nanocrystalline and then to amorphous form. We have also estimated the strain induced by e-beam irradiation in CVD graphene. These results obtained for CVD graphene are in line with previous findings reported for the mechanically exfoliated graphene [D. Teweldebrhan and A. A. Balandin, Appl. Phys. Lett. 94, 013101 (2009)]. The results have important implications for CVD graphene characterization and device fabrication, which rely on the electron microscopy.},
doi = {10.1063/1.4704197},
url = {https://www.osti.gov/biblio/22038940}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 8,
volume = 111,
place = {United States},
year = {2012},
month = {4}
}