Phase transformation and crystallization kinetics of a-Ge/Cu bilayer for blue-ray recording under thermal annealing and pulsed laser irradiation
- Department of Materials Science and Engineering, National Chung Hsing University, Taichung, Taiwan 40254 (China)
Similar phase formation and crystallization behaviors have been observed in the a-Ge/Cu bilayer under thermal annealing and pulsed laser irradiation. The Cu{sub 3}Ge phase would form prior to the crystallization of a-Ge. The crystallization temperature and activation energy for crystallization of a-Ge were reduced to 310 deg. C and 2.75 eV, respectively, due to the fast Ge diffusion in the already formed germanide phases. The reaction exponent m of {approx}2.0 for the a-Ge/Cu bilayer corresponds to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of the grain growth process. Under pulsed laser irradiation, the maximum data-transfer-rates of 44, 56, 74, and 112 Mbit/s can be achieved in the write-once blue-ray disk at the recording powers of 3, 4, 5, and 6 mW, respectively. The a-Ge/Cu bilayer also demonstrated sufficient optical contrast and adequate absorptance for low power and high speed write-once blue-ray recording.
- OSTI ID:
- 22038861
- Journal Information:
- Journal of Applied Physics, Vol. 111, Issue 4; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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