Optoelectronic surface-related properties in boron-doped and irradiated diamond thin films

Journal Article · Sun Jan 15 00:00:00 EST 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3678004· OSTI ID:22038846

Nemashkalo, A; Chapagain, P R; Strzhemechny, Y M ^[1]; Peters, R M ^[2]; Farmer, J ^[3]; Gupta, S ^[4]

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1. Department of Physics and Astronomy, Texas Christian University, Fort Worth, Texas 76129 (United States)
2. Department of Chemistry, Physics and Environmental Sciences, Paine College, Augusta, Georgia 30901 (United States)
3. Department of Physics and Missouri University Research Reactor, University of Missouri-Columbia, Missouri 65211 (United States)
4. Department of Chemistry and Biophysics, University of Pennsylvania, Philadelphia, Pennsylvania 19104 (United States)

Elucidation of microscopic properties of synthetic diamond films, such as formation and evolution of bulk and surface defects, chemistry of dopants, is necessary for a reliable quality control and reproducibility in applications. Surface photovoltage (SPV) spectroscopy and photoluminescence (PL) spectroscopy were employed to study diamond thin films grown on silicon by microwave plasma-assisted chemical vapor deposition and hot-filament chemical vapor deposition with different levels of boron doping in conjunction with gamma irradiation. SPV experiments showed that while the increase of boron concentration leads to a semiconductor-metal transition, subsequent gamma irradiation reverts quasi-metallic samples back to a semiconducting state by compensating electrical activity of boron possibly via hydrogen. One of the most pronounced common transitions observed at {approx}3.1-3.2 eV in the SPV spectra was also present in all of the PL spectra. It is likely that this is a signature of the sp{sup 2}-hybridized carbon clusters in or in the vicinity of grain boundaries.

• OSTI ID: 22038846
• Journal Information: Journal of Applied Physics, Vol. 111, Issue 2; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
DIAMONDS
DOPED MATERIALS
ELECTRO-OPTICAL EFFECTS
EMISSION SPECTROSCOPY
EV RANGE
GAMMA RADIATION
GRAIN BOUNDARIES
HYDROGEN
IRRADIATION
MICROWAVE RADIATION
PHOTOLUMINESCENCE
PLASMA
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SILICON
THIN FILMS