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Title: Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study

Abstract

Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga{sub i}) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga{sub i}-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.

Authors:
; ;  [1]; ;  [1];  [1];  [2];  [3]; ;  [4]
  1. Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden)
  2. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
  3. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580 (Japan)
  4. INFM and Dipartimento di Fisica, Universita di Roma ''La Sapienza'', Piazzale A. Moro 2, I-00185 Roma (Italy)
Publication Date:
OSTI Identifier:
22038843
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 111; Journal Issue: 2; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; HYDROGEN; HYDROGENATION; INTERSTITIALS; ION BEAMS; IRRADIATION; MAGNETIC RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS

Citation Formats

Dagnelund, D, Chen, W M, Buyanova, I A, Vorona, I P, Nosenko, G, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028, Wang, X J, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, Tu, C W, Yonezu, H, Polimeni, A, and Capizzi, M. Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study. United States: N. p., 2012. Web. doi:10.1063/1.3676576.
Dagnelund, D, Chen, W M, Buyanova, I A, Vorona, I P, Nosenko, G, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028, Wang, X J, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, Tu, C W, Yonezu, H, Polimeni, A, & Capizzi, M. Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study. United States. https://doi.org/10.1063/1.3676576
Dagnelund, D, Chen, W M, Buyanova, I A, Vorona, I P, Nosenko, G, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028, Wang, X J, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, Tu, C W, Yonezu, H, Polimeni, A, and Capizzi, M. 2012. "Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study". United States. https://doi.org/10.1063/1.3676576.
@article{osti_22038843,
title = {Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study},
author = {Dagnelund, D and Chen, W M and Buyanova, I A and Vorona, I P and Nosenko, G and Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028 and Wang, X J and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai and Tu, C W and Yonezu, H and Polimeni, A and Capizzi, M},
abstractNote = {Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga{sub i}) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga{sub i}-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.},
doi = {10.1063/1.3676576},
url = {https://www.osti.gov/biblio/22038843}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 111,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2012},
month = {Sun Jan 15 00:00:00 EST 2012}
}