Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
Abstract
Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga{sub i}) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga{sub i}-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.
- Authors:
-
- Department of Physics, Chemistry and Biology, Linkoeping University, S-581 83 Linkoeping (Sweden)
- Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
- Department of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580 (Japan)
- INFM and Dipartimento di Fisica, Universita di Roma ''La Sapienza'', Piazzale A. Moro 2, I-00185 Roma (Italy)
- Publication Date:
- OSTI Identifier:
- 22038843
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 111; Journal Issue: 2; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; HYDROGEN; HYDROGENATION; INTERSTITIALS; ION BEAMS; IRRADIATION; MAGNETIC RESONANCE; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS
Citation Formats
Dagnelund, D, Chen, W M, Buyanova, I A, Vorona, I P, Nosenko, G, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028, Wang, X J, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, Tu, C W, Yonezu, H, Polimeni, A, and Capizzi, M. Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study. United States: N. p., 2012.
Web. doi:10.1063/1.3676576.
Dagnelund, D, Chen, W M, Buyanova, I A, Vorona, I P, Nosenko, G, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028, Wang, X J, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, Tu, C W, Yonezu, H, Polimeni, A, & Capizzi, M. Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study. United States. https://doi.org/10.1063/1.3676576
Dagnelund, D, Chen, W M, Buyanova, I A, Vorona, I P, Nosenko, G, Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028, Wang, X J, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, Tu, C W, Yonezu, H, Polimeni, A, and Capizzi, M. 2012.
"Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study". United States. https://doi.org/10.1063/1.3676576.
@article{osti_22038843,
title = {Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study},
author = {Dagnelund, D and Chen, W M and Buyanova, I A and Vorona, I P and Nosenko, G and Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev 03028 and Wang, X J and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai and Tu, C W and Yonezu, H and Polimeni, A and Capizzi, M},
abstractNote = {Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga{sub i}) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga{sub i}-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.},
doi = {10.1063/1.3676576},
url = {https://www.osti.gov/biblio/22038843},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 111,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2012},
month = {Sun Jan 15 00:00:00 EST 2012}
}