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Title: Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

Abstract

Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10{sup 17} cm{sup -3} at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As{sub Zn}(V{sub Zn}){sub 2} shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As{sub Zn}(V{sub Zn}){sub 2} acceptor and the creation of the deep level defect giving rise to the green luminescence.

Authors:
; ; ; ; ;  [1]
  1. Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)
Publication Date:
OSTI Identifier:
22038798
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 11; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ANNIHILATION; ARSENIC; CATHODOLUMINESCENCE; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HALL EFFECT; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; POSITRONS; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; ZINC OXIDES

Citation Formats

To, C K, Yang, B, Su, S C, Ling, C C, Beling, C D, and Fung, S. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering. United States: N. p., 2011. Web. doi:10.1063/1.3665713.
To, C K, Yang, B, Su, S C, Ling, C C, Beling, C D, & Fung, S. Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering. United States. https://doi.org/10.1063/1.3665713
To, C K, Yang, B, Su, S C, Ling, C C, Beling, C D, and Fung, S. Thu . "Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering". United States. https://doi.org/10.1063/1.3665713.
@article{osti_22038798,
title = {Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering},
author = {To, C K and Yang, B and Su, S C and Ling, C C and Beling, C D and Fung, S},
abstractNote = {Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 deg. C. Post-growth annealing in air was carried out up to a temperature of 1000 deg. C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 deg. C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 x 10{sup 17} cm{sup -3} at the annealing temperature of 600 deg. C. The origin of the p-type conductivity was consistent with the As{sub Zn}(V{sub Zn}){sub 2} shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As{sub Zn}(V{sub Zn}){sub 2} acceptor and the creation of the deep level defect giving rise to the green luminescence.},
doi = {10.1063/1.3665713},
url = {https://www.osti.gov/biblio/22038798}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 110,
place = {United States},
year = {2011},
month = {12}
}