Growth mechanism and electronic properties of epitaxial In{sub 2}O{sub 3} films on sapphire
- Fraunhofer-Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)
- Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Facultad de Ciencias, Universidad de Cadiz, Puerto Real, Cadiz 11510 (Spain)
In this work, we report on the epitaxial growth of high-quality cubic indium oxide thick films on c-plane sapphire substrates using a two-step growth process. The epitaxial relationship of In{sub 2}O{sub 3} on (0001) Al{sub 2}O{sub 3} has been investigated. The (222) plane spacing and lattice parameter of a most strain-relaxed high-quality In{sub 2}O{sub 3} film have been determined to be 292.58 pm and 1013.53 pm, respectively. The electronic properties in dependence of the film thickness are interpreted using a three-region model. The density at the surface and interface totals (3.3{+-}1.5)x10{sup 13}cm{sup -2}, while the background electron density in the bulk was determined to be (2.4{+-}0.5)x10{sup 18}cm{sup -3}. Furthermore, post treatments such as irradiation via ultraviolet light and ozone oxidation have been found to influence only the surface layer, while the bulk electronic properties remain unchanged.
- OSTI ID:
- 22038758
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 9; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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