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Title: Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication

Abstract

Nitrogen [N]-incorporated ZnO films with columnar grains of a preferred c-axis orientation were deposited on p-Si (100) wafers, using an RF magnetron sputter deposition technique. For the N incorporation into the ZnO films, an N{sub 2}O gas was used as a doping source and also various process conditions such as N{sub 2}O gas fraction and RF power were applied. Besides, some of the ZnO films were treated with the post annealing process. And then, the micro-structural characteristics of the N-incorporated ZnO films were investigated by a scanning electron microscope, an X-ray diffractometer, and an atomic force microscope techniques. Finally, employing the N-incorporated ZnO films, the solidly mounted resonator-type film bulk acoustic wave resonator devices were fabricated and their resonance characteristics were extracted. As a result, an excellent return loss (S{sub 11}) of- 63 dB was observed at{approx} 0.6 GHz, better than ever reported.

Authors:
; ;  [1]
  1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22038733
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 110; Journal Issue: 7; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DEPOSITION; MICROSTRUCTURE; NITROGEN; NITROUS OXIDE; PIEZOELECTRICITY; RESONATORS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR MATERIALS; SOUND WAVES; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Lee, Eunju, Zhang Ruirui, and Yoon, Giwan. Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication. United States: N. p., 2011. Web. doi:10.1063/1.3641638.
Lee, Eunju, Zhang Ruirui, & Yoon, Giwan. Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication. United States. doi:10.1063/1.3641638.
Lee, Eunju, Zhang Ruirui, and Yoon, Giwan. 2011. "Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication". United States. doi:10.1063/1.3641638.
@article{osti_22038733,
title = {Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication},
author = {Lee, Eunju and Zhang Ruirui and Yoon, Giwan},
abstractNote = {Nitrogen [N]-incorporated ZnO films with columnar grains of a preferred c-axis orientation were deposited on p-Si (100) wafers, using an RF magnetron sputter deposition technique. For the N incorporation into the ZnO films, an N{sub 2}O gas was used as a doping source and also various process conditions such as N{sub 2}O gas fraction and RF power were applied. Besides, some of the ZnO films were treated with the post annealing process. And then, the micro-structural characteristics of the N-incorporated ZnO films were investigated by a scanning electron microscope, an X-ray diffractometer, and an atomic force microscope techniques. Finally, employing the N-incorporated ZnO films, the solidly mounted resonator-type film bulk acoustic wave resonator devices were fabricated and their resonance characteristics were extracted. As a result, an excellent return loss (S{sub 11}) of- 63 dB was observed at{approx} 0.6 GHz, better than ever reported.},
doi = {10.1063/1.3641638},
journal = {Journal of Applied Physics},
number = 7,
volume = 110,
place = {United States},
year = 2011,
month =
}
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