Nitrogen [N]-incorporated ZnO piezoelectric thin films and their application for ultra-small film bulk acoustic wave resonator device fabrication
- Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1 Guseong-dong, Yuseong-gu, Daejeon, 305-701 (Korea, Republic of)
Nitrogen [N]-incorporated ZnO films with columnar grains of a preferred c-axis orientation were deposited on p-Si (100) wafers, using an RF magnetron sputter deposition technique. For the N incorporation into the ZnO films, an N{sub 2}O gas was used as a doping source and also various process conditions such as N{sub 2}O gas fraction and RF power were applied. Besides, some of the ZnO films were treated with the post annealing process. And then, the micro-structural characteristics of the N-incorporated ZnO films were investigated by a scanning electron microscope, an X-ray diffractometer, and an atomic force microscope techniques. Finally, employing the N-incorporated ZnO films, the solidly mounted resonator-type film bulk acoustic wave resonator devices were fabricated and their resonance characteristics were extracted. As a result, an excellent return loss (S{sub 11}) of- 63 dB was observed at{approx} 0.6 GHz, better than ever reported.
- OSTI ID:
- 22038733
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 7; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMIC FORCE MICROSCOPY
CRYSTAL STRUCTURE
DEPOSITION
MICROSTRUCTURE
NITROGEN
NITROUS OXIDE
PIEZOELECTRICITY
RESONATORS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SOUND WAVES
SPUTTERING
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES