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Title: The electronic structure of co-sputtered zinc indium tin oxide thin films

Abstract

Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.

Authors:
; ;  [1];  [2];  [3]
  1. Departament de Fisica Aplicada i Optica, Universitat de Barcelona, 08028 Barcelona (Spain)
  2. Department of Chemistry, University of South Florida, Tampa, Florida 33620 (United States)
  3. Department of Electrical Engineering, University of South Florida, Tampa, Florida 33620 (United States)
Publication Date:
OSTI Identifier:
22038731
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 7; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; DOPED MATERIALS; ELECTRONIC STRUCTURE; INDIUM COMPOUNDS; LAYERS; OPACITY; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SPUTTERING; SURFACES; THIN FILMS; TIN OXIDES; ULTRAVIOLET RADIATION; VALENCE; VISIBLE RADIATION; WORK FUNCTIONS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS

Citation Formats

Carreras, Paz, Antony, Aldrin, Bertomeu, Joan, Gutmann, Sebastian, and Schlaf, Rudy. The electronic structure of co-sputtered zinc indium tin oxide thin films. United States: N. p., 2011. Web. doi:10.1063/1.3647780.
Carreras, Paz, Antony, Aldrin, Bertomeu, Joan, Gutmann, Sebastian, & Schlaf, Rudy. The electronic structure of co-sputtered zinc indium tin oxide thin films. United States. doi:10.1063/1.3647780.
Carreras, Paz, Antony, Aldrin, Bertomeu, Joan, Gutmann, Sebastian, and Schlaf, Rudy. Sat . "The electronic structure of co-sputtered zinc indium tin oxide thin films". United States. doi:10.1063/1.3647780.
@article{osti_22038731,
title = {The electronic structure of co-sputtered zinc indium tin oxide thin films},
author = {Carreras, Paz and Antony, Aldrin and Bertomeu, Joan and Gutmann, Sebastian and Schlaf, Rudy},
abstractNote = {Zinc indium tin oxide (ZITO) transparent conductive oxide layers were deposited via radio frequency (RF) magnetron co-sputtering at room temperature. A series of samples with gradually varying zinc content was investigated. The samples were characterized with x-ray and ultraviolet photoemission spectroscopy (XPS, UPS) to determine the electronic structure of the surface. Valence and conduction bands maxima (VBM, CBM), and work function were determined. The experiments indicate that increasing Zn content results in films with a higher defect rate at the surface leading to the formation of a degenerately doped surface layer if the Zn content surpasses {approx}50%. Furthermore, the experiments demonstrate that ZITO is susceptible to ultraviolet light induced work function reduction, similar to what was earlier observed on ITO and TiO{sub 2} films.},
doi = {10.1063/1.3647780},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 110,
place = {United States},
year = {2011},
month = {10}
}