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Title: Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation

Abstract

The accurate determination of the chemical composition of multicomponent antimonide layers still remains difficult. The problem becomes even more complicated when group III antimonides are grown in a MBE chamber that is also used for the growth of group III arsenides. In this paper, the composition of MBE grown AlGaAsSb layers is investigated in the context of unintentional arsenic incorporation. Control of the As concentration and a determination of the AlGaSb composition are crucial for an accurate calculation of the AlGaAsSb stoichiometry. It has been found that when using diffraction measurements with an As detection limit of 0.087%, the Al content in Al{sub 0.5}Ga{sub 0.5}Sb is determined with an accuracy of {+-}1%. Taking into account the GaSb reference from secondary ion mass spectrometry, the accuracy can be increased to {+-}0.52% of Al. The Al/Ga ratio determined for AlGaSb layers is further used for the calculation of the As content in AlGaAsSb alloys grown under the same technological conditions as the ternary layer. As a result, the procedure for the accurate determination of stoichiometry coefficients in this material is recommended.

Authors:
; ; ; ;  [1]; ;  [2]
  1. Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
Publication Date:
OSTI Identifier:
22038727
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 7; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; ARSENIC; CHEMICAL COMPOSITION; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; LAYERS; MASS SPECTRA; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; ROUGHNESS; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SURFACES; X-RAY DIFFRACTION

Citation Formats

Jasik, A., Kubacka-Traczyk, J., Reginski, K., Sankowska, I., Kaniewski, J., Jakiela, R., and Wawro, A. Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation. United States: N. p., 2011. Web. doi:10.1063/1.3642995.
Jasik, A., Kubacka-Traczyk, J., Reginski, K., Sankowska, I., Kaniewski, J., Jakiela, R., & Wawro, A. Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation. United States. doi:10.1063/1.3642995.
Jasik, A., Kubacka-Traczyk, J., Reginski, K., Sankowska, I., Kaniewski, J., Jakiela, R., and Wawro, A. Sat . "Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation". United States. doi:10.1063/1.3642995.
@article{osti_22038727,
title = {Method of determination of AlGaAsSb layer composition in molecular beam epitaxy processes with regard to unintentional As incorporation},
author = {Jasik, A. and Kubacka-Traczyk, J. and Reginski, K. and Sankowska, I. and Kaniewski, J. and Jakiela, R. and Wawro, A.},
abstractNote = {The accurate determination of the chemical composition of multicomponent antimonide layers still remains difficult. The problem becomes even more complicated when group III antimonides are grown in a MBE chamber that is also used for the growth of group III arsenides. In this paper, the composition of MBE grown AlGaAsSb layers is investigated in the context of unintentional arsenic incorporation. Control of the As concentration and a determination of the AlGaSb composition are crucial for an accurate calculation of the AlGaAsSb stoichiometry. It has been found that when using diffraction measurements with an As detection limit of 0.087%, the Al content in Al{sub 0.5}Ga{sub 0.5}Sb is determined with an accuracy of {+-}1%. Taking into account the GaSb reference from secondary ion mass spectrometry, the accuracy can be increased to {+-}0.52% of Al. The Al/Ga ratio determined for AlGaSb layers is further used for the calculation of the As content in AlGaAsSb alloys grown under the same technological conditions as the ternary layer. As a result, the procedure for the accurate determination of stoichiometry coefficients in this material is recommended.},
doi = {10.1063/1.3642995},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 110,
place = {United States},
year = {2011},
month = {10}
}