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Title: Enhancement of nanovoid formation in annealed amorphous Al{sub 2}O{sub 3} including W

Abstract

The effect of W on the nanovoid formation in annealed amorphous Al{sub 2}O{sub 3} was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al{sub 2}O{sub 3} (without W) and resistance-heating deposited Al{sub 2}O{sub 3} (with 10 at. % W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al{sub 2}O{sub 3} showed that the introduction of W into amorphous Al{sub 2}O{sub 3} brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al{sub 2}O{sub 3} prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.

Authors:
; ; ; ;  [1];  [2]; ;  [3];  [4]
  1. The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka 8-1, Ibaraki, Osaka 567-0047 (Japan)
  2. World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai 980-8577 (Japan)
  3. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai 980-8577 (Japan)
  4. Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)
Publication Date:
OSTI Identifier:
22038714
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 6; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM OXIDES; AMORPHOUS STATE; ANNEALING; COMPARATIVE EVALUATIONS; DEPOSITION; DISTRIBUTION FUNCTIONS; ELECTRIC CONDUCTIVITY; ELECTRIC HEATING; ELECTRON BEAMS; MATRIX MATERIALS; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; SOLIDS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; VOIDS

Citation Formats

Nakamura, R., Ishimaru, M., Tane, M., Shudo, T., Nakajima, H., Hirata, A., Sato, K., Konno, T. J., and Kimizuka, H. Enhancement of nanovoid formation in annealed amorphous Al{sub 2}O{sub 3} including W. United States: N. p., 2011. Web. doi:10.1063/1.3639290.
Nakamura, R., Ishimaru, M., Tane, M., Shudo, T., Nakajima, H., Hirata, A., Sato, K., Konno, T. J., & Kimizuka, H. Enhancement of nanovoid formation in annealed amorphous Al{sub 2}O{sub 3} including W. United States. doi:10.1063/1.3639290.
Nakamura, R., Ishimaru, M., Tane, M., Shudo, T., Nakajima, H., Hirata, A., Sato, K., Konno, T. J., and Kimizuka, H. Thu . "Enhancement of nanovoid formation in annealed amorphous Al{sub 2}O{sub 3} including W". United States. doi:10.1063/1.3639290.
@article{osti_22038714,
title = {Enhancement of nanovoid formation in annealed amorphous Al{sub 2}O{sub 3} including W},
author = {Nakamura, R. and Ishimaru, M. and Tane, M. and Shudo, T. and Nakajima, H. and Hirata, A. and Sato, K. and Konno, T. J. and Kimizuka, H.},
abstractNote = {The effect of W on the nanovoid formation in annealed amorphous Al{sub 2}O{sub 3} was studied by transmission electron microscopy and molecular dynamics simulations. A comparison of the void formation behavior in electron-beam deposited Al{sub 2}O{sub 3} (without W) and resistance-heating deposited Al{sub 2}O{sub 3} (with 10 at. % W) revealed that W enhances the formation and growth of nanovoids. An analysis of the pair distribution function (PDF) in both types of amorphous Al{sub 2}O{sub 3} showed that the introduction of W into amorphous Al{sub 2}O{sub 3} brings about a significant change in the amorphous structure. Furthermore, it was found by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) that sub-nm sized W clusters exist in as-deposited Al{sub 2}O{sub 3} prepared by resistance-heating and then dissolve in the amorphous matrix with annealing. The combination of PDF analysis and HAADF-STEM observation provides evidence that the enhancement of void formation originates in the heterogeneous short-range atomic configurations induced by the addition of W.},
doi = {10.1063/1.3639290},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 6,
volume = 110,
place = {United States},
year = {2011},
month = {9}
}