skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Self-diffusion in compressively strained Ge

Abstract

Under a compressive biaxial strain of {approx} 0.71%, Ge self-diffusion has been measured using an isotopically controlled Ge single-crystal layer grown on a relaxed Si{sub 0.2}Ge{sub 0.8} virtual substrate. The self-diffusivity is enhanced by the compressive strain and its behavior is fully consistent with a theoretical prediction of a generalized activation volume model of a simple vacancy mediated diffusion, reported by Aziz et al.[Phys. Rev. B 73, 054101 (2006)]. The activation volume of (-0.65{+-}0.21) times the Ge atomic volume quantitatively describes the observed enhancement due to the compressive biaxial strain very well.

Authors:
; ;  [1]; ; ;  [2];  [3];  [4]
  1. School of Fundamental Science and Technology, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522 (Japan)
  2. Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082 (Japan)
  3. Department of Physics, University of Warwick, Coventry CV47L (United Kingdom)
  4. University of California at Berkeley and Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22038665
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 110; Journal Issue: 3; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHEMICAL VAPOR DEPOSITION; COMPRESSIBILITY; CRYSTAL GROWTH; GERMANIUM; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; SELF-DIFFUSION; SEMICONDUCTOR MATERIALS; STRAINS; SUBSTRATES; VACANCIES

Citation Formats

Kawamura, Yoko, Uematsu, Masashi, Itoh, Kohei M., Hoshi, Yusuke, Sawano, Kentarou, Shiraki, Yasuhiro, Myronov, Maksym, and Haller, Eugene E.. Self-diffusion in compressively strained Ge. United States: N. p., 2011. Web. doi:10.1063/1.3608171.
Kawamura, Yoko, Uematsu, Masashi, Itoh, Kohei M., Hoshi, Yusuke, Sawano, Kentarou, Shiraki, Yasuhiro, Myronov, Maksym, & Haller, Eugene E.. Self-diffusion in compressively strained Ge. United States. doi:10.1063/1.3608171.
Kawamura, Yoko, Uematsu, Masashi, Itoh, Kohei M., Hoshi, Yusuke, Sawano, Kentarou, Shiraki, Yasuhiro, Myronov, Maksym, and Haller, Eugene E.. Mon . "Self-diffusion in compressively strained Ge". United States. doi:10.1063/1.3608171.
@article{osti_22038665,
title = {Self-diffusion in compressively strained Ge},
author = {Kawamura, Yoko and Uematsu, Masashi and Itoh, Kohei M. and Hoshi, Yusuke and Sawano, Kentarou and Shiraki, Yasuhiro and Myronov, Maksym and Haller, Eugene E.},
abstractNote = {Under a compressive biaxial strain of {approx} 0.71%, Ge self-diffusion has been measured using an isotopically controlled Ge single-crystal layer grown on a relaxed Si{sub 0.2}Ge{sub 0.8} virtual substrate. The self-diffusivity is enhanced by the compressive strain and its behavior is fully consistent with a theoretical prediction of a generalized activation volume model of a simple vacancy mediated diffusion, reported by Aziz et al.[Phys. Rev. B 73, 054101 (2006)]. The activation volume of (-0.65{+-}0.21) times the Ge atomic volume quantitatively describes the observed enhancement due to the compressive biaxial strain very well.},
doi = {10.1063/1.3608171},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 3,
volume = 110,
place = {United States},
year = {2011},
month = {8}
}