X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

Journal Article · Thu Dec 01 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3664832· OSTI ID:22036784

Sasaki, Takuo; Ohshita, Yoshio; Kamiya, Itaru; Yamaguchi, Masafumi ^[1]; Suzuki, Hidetoshi ^[2]; Takahasi, Masamitu ^[3]

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1. Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511 (Japan)
2. University of Miyazaki, 1-1 Gakuen, Kibanadai-nishi, Miyazaki 889-2154 (Japan)
3. Japan Atomic Energy Agency, 1-1-1 Koto, Sayo, Hyogo 679-5148 (Japan)

Dislocation-mediated strain relaxation during lattice-mismatched InGaAs/GaAs(001) heteroepitaxy was studied through in situ x-ray reciprocal space mapping (in situ RSM). At the synchrotron radiation facility SPring-8, a hybrid system of molecular beam epitaxy and x-ray diffractometry with a two-dimensional detector enabled us to perform in situ RSM at high-speed and high-resolution. Using this experimental setup, four results in terms of film properties were simultaneously extracted as functions of film thickness. These were the lattice constants, the diffraction broadenings along in-plane and out-of-plane directions, and the diffuse scattering. Based on correlations among these results, the strain relaxation processes were classified into four thickness ranges with different dislocation behavior. In addition, the existence of transition regimes between the thickness ranges was identified. Finally, the dominant dislocation behavior corresponding to each of the four thickness ranges and transition regimes was noted.

• OSTI ID: 22036784
• Journal Information: Journal of Applied Physics, Vol. 110, Issue 11; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CORRELATIONS
DIFFUSE SCATTERING
DISLOCATIONS
FILMS
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
RELAXATION
SEMICONDUCTOR MATERIALS
STRAINS
SYNCHROTRON RADIATION
THICKNESS
X-RAY DIFFRACTION