Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology
- Fachbereich Physik, Universiaet Osnabrueck, Barbarastrasse 7, Osnabrueck D-49069 (Germany)
- Deutsches Elektronen Synchrotron (DESY), Notkestr. 85, Hamburg (Germany)
- Institute of Electronic Materials and Devices, Leibniz Universitaet Hannover, Schneiderberg 32, Hannover D-30167 (Germany)
The structure and morphology of CaF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) layered structures with film thicknesses in the range of very few nanometers has been studied with synchrotron-based radiation. While the CaF{sub 2} film is grown via molecular beam epitaxy, the Ge film is fabricated by surfactant enhanced solid phase epitaxy with Sb as surfactant. The CaF{sub 2} film forms two laterally separated phases of relaxed CaF{sub 2} and pseudomorphic CaF{sub 2}, respectively, although the film thickness is very homogeneous. The Ge film is completely relaxed and forms A-oriented parts as well as B-oriented parts, due to twinning. In spite of the large surface roughness of the Ge film, it completely wets CaF{sub 2}/Si(111) also after annealing at 600 deg. C, due to the application of Sb during the annealing process.
- OSTI ID:
- 22036766
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 10; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANNEALING
ANTIMONY
CALCIUM
CALCIUM FLUORIDES
CRYSTAL STRUCTURE
GERMANIUM
INTERFACES
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
MORPHOLOGY
REFLECTION
ROUGHNESS
SEMICONDUCTOR MATERIALS
SILICON
SOLIDS
SURFACES
SYNCHROTRON RADIATION
THIN FILMS
TWINNING
X-RAY DIFFRACTION