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Title: Surfactant enhanced solid phase epitaxy of Ge/CaF{sub 2}/Si(111): Synchrotron x-ray characterization of structure and morphology

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3661174· OSTI ID:22036766
 [1];  [2]; ; ;  [3]
  1. Fachbereich Physik, Universiaet Osnabrueck, Barbarastrasse 7, Osnabrueck D-49069 (Germany)
  2. Deutsches Elektronen Synchrotron (DESY), Notkestr. 85, Hamburg (Germany)
  3. Institute of Electronic Materials and Devices, Leibniz Universitaet Hannover, Schneiderberg 32, Hannover D-30167 (Germany)

The structure and morphology of CaF{sub 2}/Si(111) and Ge/CaF{sub 2}/Si(111) layered structures with film thicknesses in the range of very few nanometers has been studied with synchrotron-based radiation. While the CaF{sub 2} film is grown via molecular beam epitaxy, the Ge film is fabricated by surfactant enhanced solid phase epitaxy with Sb as surfactant. The CaF{sub 2} film forms two laterally separated phases of relaxed CaF{sub 2} and pseudomorphic CaF{sub 2}, respectively, although the film thickness is very homogeneous. The Ge film is completely relaxed and forms A-oriented parts as well as B-oriented parts, due to twinning. In spite of the large surface roughness of the Ge film, it completely wets CaF{sub 2}/Si(111) also after annealing at 600 deg. C, due to the application of Sb during the annealing process.

OSTI ID:
22036766
Journal Information:
Journal of Applied Physics, Vol. 110, Issue 10; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English