Electron-ion dynamics in laser-assisted desorption of hydrogen atoms from H-Si(111) surface
- Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
In the framework of real time real space time-dependent density functional theory we have studied the electron-ion dynamics of a hydrogen-terminated silicon surface H-Si(111) subjected to intense laser irradiation. Two surface fragments of different sizes have been used in the simulations. When the intensity and duration of the laser exceed certain levels (which depend on the wavelength) we observe the desorption of the hydrogen atoms, while the underlying silicon layer remains essentially undamaged. Upon further increase of the laser intensity, the chemical bonds between silicon atoms break as well. The results of the simulations suggest that with an appropriate choice of laser parameters it should be possible to remove the hydrogen layer from the H-Si(111) surface in a matter of a few tens of femtoseconds. We have also observed that at high laser field intensities (2-4 V/A in this work) the desorption occurs even when the laser frequency is smaller than the optical gap of the silicon surface fragments. Therefore, nonlinear phenomena must play an essential role in such desorption processes.
- OSTI ID:
- 22036730
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 6; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Si-H bond activation on Cu: Reaction of silane on Cu(111)
Pathway of H[sub 2] desorption from dihydride Si(100)