Laser damage properties of TiO{sub 2}/Al{sub 2}O{sub 3} thin films grown by atomic layer deposition
Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO{sub 2}/Al{sub 2}O{sub 3} films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the films deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm {Phi} samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO{sub 2}/Al{sub 2}O{sub 3} films, the LIDTs were 6.73{+-}0.47 J/cm{sup 2} and 6.5{+-}0.46 J/cm{sup 2} at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.
- OSTI ID:
- 22036707
- Journal Information:
- Applied Optics, Vol. 50, Issue 24; Other Information: (c) 2011 Optical Society of America; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6935
- Country of Publication:
- United States
- Language:
- English
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