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Title: Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser

Abstract

A spatial axisymmetric finite element model of single-crystal silicon irradiated by a 1064 nm millisecond laser is used to investigate the thermal stress damage induced by a millisecond laser. The transient temperature field and the thermal stress field for 2 ms laser irradiation with a laser fluence of 254 J/cm{sup 2} are obtained. The numerical simulation results indicate that the hoop stresses along the r axis on the front surface are compressive stress within the laser spot and convert to tensile stress outside the laser spot, while the radial stresses along the r axis on the front surface and on the z axis are compressive stress. The temperature of the irradiated center is the highest temperature obtained, yet the stress is not always highest during laser irradiation. At the end of the laser irradiation, the maximal hoop stress is located at r=0.5 mm and the maximal radial stress is located at r=0.76 mm. The temperature measurement experiments are performed by IR pyrometer. The numerical result of the temperature field is consistent with the experimental result. The damage morphologies of silicon under the action of a 254 J/cm{sup 2} laser are inspected by optical microscope. The cracks are observed initiating atmore » r=0.5 mm and extending along the radial direction.« less

Authors:
; ; ; ; ; ;
Publication Date:
OSTI Identifier:
22036679
Resource Type:
Journal Article
Journal Name:
Applied Optics
Additional Journal Information:
Journal Volume: 50; Journal Issue: 21; Other Information: (c) 2011 Optical Society of America; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6935
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AXIAL SYMMETRY; COMPUTERIZED SIMULATION; CRACKS; DAMAGE; FINITE ELEMENT METHOD; LASER RADIATION; MONOCRYSTALS; OPTICAL MICROSCOPES; PYROMETERS; SILICON; SURFACES; TEMPERATURE MEASUREMENT; THERMAL STRESSES

Citation Formats

Wang Xi, Qin Yuan, Wang Bin, Zhang Liang, Shen Zhonghua, Lu Jian, and Ni Xiaowu. Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser. United States: N. p., 2011. Web. doi:10.1364/AO.50.003725.
Wang Xi, Qin Yuan, Wang Bin, Zhang Liang, Shen Zhonghua, Lu Jian, & Ni Xiaowu. Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser. United States. doi:10.1364/AO.50.003725.
Wang Xi, Qin Yuan, Wang Bin, Zhang Liang, Shen Zhonghua, Lu Jian, and Ni Xiaowu. Wed . "Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser". United States. doi:10.1364/AO.50.003725.
@article{osti_22036679,
title = {Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser},
author = {Wang Xi and Qin Yuan and Wang Bin and Zhang Liang and Shen Zhonghua and Lu Jian and Ni Xiaowu},
abstractNote = {A spatial axisymmetric finite element model of single-crystal silicon irradiated by a 1064 nm millisecond laser is used to investigate the thermal stress damage induced by a millisecond laser. The transient temperature field and the thermal stress field for 2 ms laser irradiation with a laser fluence of 254 J/cm{sup 2} are obtained. The numerical simulation results indicate that the hoop stresses along the r axis on the front surface are compressive stress within the laser spot and convert to tensile stress outside the laser spot, while the radial stresses along the r axis on the front surface and on the z axis are compressive stress. The temperature of the irradiated center is the highest temperature obtained, yet the stress is not always highest during laser irradiation. At the end of the laser irradiation, the maximal hoop stress is located at r=0.5 mm and the maximal radial stress is located at r=0.76 mm. The temperature measurement experiments are performed by IR pyrometer. The numerical result of the temperature field is consistent with the experimental result. The damage morphologies of silicon under the action of a 254 J/cm{sup 2} laser are inspected by optical microscope. The cracks are observed initiating at r=0.5 mm and extending along the radial direction.},
doi = {10.1364/AO.50.003725},
journal = {Applied Optics},
issn = {0003-6935},
number = 21,
volume = 50,
place = {United States},
year = {2011},
month = {7}
}