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Title: Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots

Abstract

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Authors:
;  [1]
  1. Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22028015
Resource Type:
Journal Article
Journal Name:
Journal of Experimental and Theoretical Physics
Additional Journal Information:
Journal Volume: 113; Journal Issue: 3; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7761
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; BOX MODELS; ELECTRONIC STRUCTURE; ENERGY LEVELS; ENERGY SPECTRA; GERMANIUM; HOLES; INTERFACES; LAYERS; PHOTOCONDUCTIVITY; PHOTOSENSITIVITY; QUANTUM DOTS; SILICON

Citation Formats

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru, and Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru. Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots. United States: N. p., 2011. Web. doi:10.1134/S1063776111070107.
Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru, & Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru. Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots. United States. doi:10.1134/S1063776111070107.
Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru, and Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru. Thu . "Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots". United States. doi:10.1134/S1063776111070107.
@article{osti_22028015,
title = {Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots},
author = {Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru and Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru},
abstractNote = {The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.},
doi = {10.1134/S1063776111070107},
journal = {Journal of Experimental and Theoretical Physics},
issn = {1063-7761},
number = 3,
volume = 113,
place = {United States},
year = {2011},
month = {9}
}