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Title: Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

Abstract

Roughening of nanoscale polymer masks during plasma etching (PE) limits feature critical dimensions in current and future lithographic technologies. Roughness formation of 193 nm photoresist (PR) is mechanistically explained by plasma-induced changes in mechanical properties introduced at the PR surface ({approx}2 nm) by ions and in parallel in the material bulk ({approx}200 nm) by ultraviolet (UV) plasma radiation. Synergistic roughening of polymer masks can be prevented by pretreating PR patterns with a high dose of He plasma UV exposure to saturate bulk material modifications. During subsequent PE, PR patterns are stabilized and exhibit improved etch resistance and reduced surface/line-edge roughness.

Authors:
; ; ;  [1]; ; ;  [2]
  1. Department of Material Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States)
  2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
Publication Date:
OSTI Identifier:
22027852
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 26; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ETCHING; HELIUM; IONS; IRRADIATION; MASKING; MECHANICAL PROPERTIES; MODIFICATIONS; NANOSTRUCTURES; PHOTORESISTORS; PLASMA; POLYMERS; RADIATION EFFECTS; ROUGHNESS; SPUTTERING; SURFACES; ULTRAVIOLET RADIATION

Citation Formats

Weilnboeck, F, Metzler, D, Kumar, N, Oehrlein, G S, Bruce, R L, Engelmann, S, and Fuller, N. Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity. United States: N. p., 2011. Web. doi:10.1063/1.3671995.
Weilnboeck, F, Metzler, D, Kumar, N, Oehrlein, G S, Bruce, R L, Engelmann, S, & Fuller, N. Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity. United States. https://doi.org/10.1063/1.3671995
Weilnboeck, F, Metzler, D, Kumar, N, Oehrlein, G S, Bruce, R L, Engelmann, S, and Fuller, N. 2011. "Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity". United States. https://doi.org/10.1063/1.3671995.
@article{osti_22027852,
title = {Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity},
author = {Weilnboeck, F and Metzler, D and Kumar, N and Oehrlein, G S and Bruce, R L and Engelmann, S and Fuller, N},
abstractNote = {Roughening of nanoscale polymer masks during plasma etching (PE) limits feature critical dimensions in current and future lithographic technologies. Roughness formation of 193 nm photoresist (PR) is mechanistically explained by plasma-induced changes in mechanical properties introduced at the PR surface ({approx}2 nm) by ions and in parallel in the material bulk ({approx}200 nm) by ultraviolet (UV) plasma radiation. Synergistic roughening of polymer masks can be prevented by pretreating PR patterns with a high dose of He plasma UV exposure to saturate bulk material modifications. During subsequent PE, PR patterns are stabilized and exhibit improved etch resistance and reduced surface/line-edge roughness.},
doi = {10.1063/1.3671995},
url = {https://www.osti.gov/biblio/22027852}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 26,
volume = 99,
place = {United States},
year = {2011},
month = {12}
}