Characterization and mechanism of He plasma pretreatment of nanoscale polymer masks for improved pattern transfer fidelity

Journal Article · Mon Dec 26 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3671995· OSTI ID:22027852

Weilnboeck, F; Metzler, D; Kumar, N; Oehrlein, G S ^[1]; Bruce, R L; Engelmann, S; Fuller, N ^[2]

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1. Department of Material Science and Engineering, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742 (United States)
2. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

Roughening of nanoscale polymer masks during plasma etching (PE) limits feature critical dimensions in current and future lithographic technologies. Roughness formation of 193 nm photoresist (PR) is mechanistically explained by plasma-induced changes in mechanical properties introduced at the PR surface ({approx}2 nm) by ions and in parallel in the material bulk ({approx}200 nm) by ultraviolet (UV) plasma radiation. Synergistic roughening of polymer masks can be prevented by pretreating PR patterns with a high dose of He plasma UV exposure to saturate bulk material modifications. During subsequent PE, PR patterns are stabilized and exhibit improved etch resistance and reduced surface/line-edge roughness.

• OSTI ID: 22027852
• Journal Information: Applied Physics Letters, Vol. 99, Issue 26; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ETCHING
HELIUM
IONS
IRRADIATION
MASKING
MECHANICAL PROPERTIES
MODIFICATIONS
NANOSTRUCTURES
PHOTORESISTORS
PLASMA
POLYMERS
RADIATION EFFECTS
ROUGHNESS
SPUTTERING
SURFACES
ULTRAVIOLET RADIATION