Photoemission induced bias in two-dimensional silicon pn junctions

Journal Article · Mon Nov 14 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3662440· OSTI ID:22027812

Lavayssiere, M; Renault, O; Mariolle, D; Veillerot, M; Barnes, J P; Hartmann, J M ^[1]; Leroy, J; Barrett, N ^[2]

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1. CEA, LETI, Minatec Campus, F-38054 Grenoble Cedex 09 (France)
2. CEA, IRAMIS, SPCSI, LENSIS, F-91191 Gif-sur-Yvette (France)

Spectroscopic x-ray photoelectron emission microscopy was used to study the role of the pn junction on imaging of micron scale n- and p-doped silicon patterns epitaxially grown on p- and n-type substrates, respectively. In the closed n-doped patterns, contrast with respect to open patterns is observed in both work function and Si 2p binding energy. Reverse bias at the junction creates a shift of electrical potential induced by photoemission in the closed patterns. No shift is observed for p-doped patterns on n substrate, pointing to the importance of doping combination and pattern geometry in the contrast observed in electron microscopy.

• OSTI ID: 22027812
• Journal Information: Applied Physics Letters, Vol. 99, Issue 20; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BINDING ENERGY
DOPED MATERIALS
ELECTRIC POTENTIAL
ELECTRON MICROSCOPY
EMISSION SPECTROSCOPY
EPITAXY
PHOTOEMISSION
P-N JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
WORK FUNCTIONS
X-RAY PHOTOELECTRON SPECTROSCOPY