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Title: Increased photoluminescence of strain-reduced, high-Sn composition Ge{sub 1-x}Sn{sub x} alloys grown by molecular beam epitaxy

Abstract

We synthesized up to Ge{sub 0.914}Sn{sub 0.086} alloys on (100) GaAs/In{sub y}Ga{sub 1-y}As buffer layers using molecular beam epitaxy. The buffer layers enable engineered control of strain in the Ge{sub 1-x}Sn{sub x} layers to reduce strain-related defects and precipitation. Samples grown under similar conditions show a monotonic increase in the integrated photoluminescence (PL) intensity as the Sn composition is increased, indicating changes in the bandstructure favorable for optoelectronics. We account for bandgap changes from strain and composition to determine a direct bandgap bowing parameter of b = 2.1 {+-} 0.1. According to our models, these are the first Ge{sub 1-x}Sn{sub x} samples that are both direct-bandgap and exhibit PL.

Authors:
; ; ;  [1];  [2];  [3]
  1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  2. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
  3. Stanford Nano Center (SNC), Stanford University, Stanford, California 94305 (United States)
Publication Date:
OSTI Identifier:
22027792
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 18; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ARSENIDES; GERMANIUM ALLOYS; LAYERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PRECIPITATION; STRAINS; TIN ALLOYS

Citation Formats

Chen, Robert, Huo, Yijie, Kamins, Theodore I, Harris, James S, Hai, Lin, and Hitzman, Charles. Increased photoluminescence of strain-reduced, high-Sn composition Ge{sub 1-x}Sn{sub x} alloys grown by molecular beam epitaxy. United States: N. p., 2011. Web. doi:10.1063/1.3658632.
Chen, Robert, Huo, Yijie, Kamins, Theodore I, Harris, James S, Hai, Lin, & Hitzman, Charles. Increased photoluminescence of strain-reduced, high-Sn composition Ge{sub 1-x}Sn{sub x} alloys grown by molecular beam epitaxy. United States. https://doi.org/10.1063/1.3658632
Chen, Robert, Huo, Yijie, Kamins, Theodore I, Harris, James S, Hai, Lin, and Hitzman, Charles. 2011. "Increased photoluminescence of strain-reduced, high-Sn composition Ge{sub 1-x}Sn{sub x} alloys grown by molecular beam epitaxy". United States. https://doi.org/10.1063/1.3658632.
@article{osti_22027792,
title = {Increased photoluminescence of strain-reduced, high-Sn composition Ge{sub 1-x}Sn{sub x} alloys grown by molecular beam epitaxy},
author = {Chen, Robert and Huo, Yijie and Kamins, Theodore I and Harris, James S and Hai, Lin and Hitzman, Charles},
abstractNote = {We synthesized up to Ge{sub 0.914}Sn{sub 0.086} alloys on (100) GaAs/In{sub y}Ga{sub 1-y}As buffer layers using molecular beam epitaxy. The buffer layers enable engineered control of strain in the Ge{sub 1-x}Sn{sub x} layers to reduce strain-related defects and precipitation. Samples grown under similar conditions show a monotonic increase in the integrated photoluminescence (PL) intensity as the Sn composition is increased, indicating changes in the bandstructure favorable for optoelectronics. We account for bandgap changes from strain and composition to determine a direct bandgap bowing parameter of b = 2.1 {+-} 0.1. According to our models, these are the first Ge{sub 1-x}Sn{sub x} samples that are both direct-bandgap and exhibit PL.},
doi = {10.1063/1.3658632},
url = {https://www.osti.gov/biblio/22027792}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 99,
place = {United States},
year = {Mon Oct 31 00:00:00 EDT 2011},
month = {Mon Oct 31 00:00:00 EDT 2011}
}