Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films
- Materials Research Centre, Indian Institute of Science, Bangalore 560012 (India)
- Central Research Laboratory, Bharat Electronics, Bangalore 560013 (India)
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bangalore 560064 (India)
We have grown Ga deficient GaN epitaxial films on (0001) sapphire substrate by plasma-assisted molecular beam epitaxy and report the experimental evidence of room temperature ferromagnetic behavior. The observed yellow emission peak in room temperature photoluminescence spectra and the peak positioning at 300 cm{sup -1} in Raman spectra confirms the existence of Ga vacancies. The x-ray photoelectron spectroscopic measurements further confirmed the formation of Ga vacancies; since the N/Ga is found to be >1. The ferromagnetism is believed to originate from the polarization of the unpaired 2p electrons of N surrounding the Ga vacancy.
- OSTI ID:
- 22027782
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 16; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Visible photoluminescence and room temperature ferromagnetism in high In-content InGaN:Yb nanorods grown by molecular beam epitaxy
Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects
Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics
Journal Article
·
Mon Sep 28 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22027782
+3 more
Enhanced room temperature ferromagnetism in electrodeposited Co-doped ZnO nanostructured thin films by controlling the oxygen vacancy defects
Journal Article
·
Sun Jun 07 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:22027782
+1 more
Heteroepitaxial VO{sub 2} thin films on GaN: Structure and metal-insulator transition characteristics
Journal Article
·
Mon Oct 01 00:00:00 EDT 2012
· Journal of Applied Physics
·
OSTI ID:22027782
Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PLASMA
POLARIZATION
RAMAN SPECTRA
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CRYSTALS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PLASMA
POLARIZATION
RAMAN SPECTRA
SAPPHIRE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VACANCIES
X-RAY PHOTOELECTRON SPECTROSCOPY