Properties of unrelaxed InAs{sub 1-X}Sb{sub X} alloys grown on compositionally graded buffers

Journal Article · Mon Oct 03 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3650473· OSTI ID:22027758

Belenky, G; Donetsky, D; Kipshidze, G; Wang, D; Shterengas, L ^[1]; Sarney, W L; Svensson, S P ^[2]

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1. Department of ECE, Stony Brook University, Stony Brook, New York 11794 (United States)
2. U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, Maryland 20783 (United States)

Unrelaxed InAs{sub 1-x}Sb{sub x} layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs{sub 1-x}Sb{sub x} with given X. The InAs{sub 0.56}Sb{sub 0.44} layers demonstrate photoluminescence peak at 9.4 {mu}m at 150 K. The minority carrier lifetime measured at 77 K for InAs{sub 0.8}Sb{sub 0.2} was {tau} = 250 ns.

• OSTI ID: 22027758
• Journal Information: Applied Physics Letters, Vol. 99, Issue 14; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
BUFFERS
CARRIER LIFETIME
CHARGE CARRIERS
CRYSTAL GROWTH
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE