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Title: Electrical properties of atomic layer deposited aluminum oxide on gallium nitride

Abstract

We report on our investigation of the electrical properties of metal/Al{sub 2}O{sub 3}/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al{sub 2}O{sub 3} films on GaN substrates. The conduction band offset at the Al{sub 2}O{sub 3}/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 x 10{sup 12 }cm{sup -2} at the Al{sub 2}O{sub 3}/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.

Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
22027757
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 13; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPACITANCE; CAPACITORS; CHARGE DENSITY; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; GALLIUM NITRIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; NICKEL; SEMICONDUCTOR MATERIALS; SUBSTRATES

Citation Formats

Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, and Rajan, Siddharth. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. United States: N. p., 2011. Web. doi:10.1063/1.3645616.
Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, & Rajan, Siddharth. Electrical properties of atomic layer deposited aluminum oxide on gallium nitride. United States. doi:10.1063/1.3645616.
Esposto, Michele, Krishnamoorthy, Sriram, Nath, Digbijoy N., Bajaj, Sanyam, Hung, Ting-Hsiang, and Rajan, Siddharth. Mon . "Electrical properties of atomic layer deposited aluminum oxide on gallium nitride". United States. doi:10.1063/1.3645616.
@article{osti_22027757,
title = {Electrical properties of atomic layer deposited aluminum oxide on gallium nitride},
author = {Esposto, Michele and Krishnamoorthy, Sriram and Nath, Digbijoy N. and Bajaj, Sanyam and Hung, Ting-Hsiang and Rajan, Siddharth},
abstractNote = {We report on our investigation of the electrical properties of metal/Al{sub 2}O{sub 3}/GaN metal-insulator-semiconductor capacitors. We determined the conduction band offset and interface charge density of the alumina/GaN interface by analyzing the capacitance-voltage characteristics of atomic layer deposited Al{sub 2}O{sub 3} films on GaN substrates. The conduction band offset at the Al{sub 2}O{sub 3}/GaN interface was calculated to be 2.13 eV, in agreement with theoretical predications. A non-zero field of 0.93 MV/cm in the oxide under flat-band conditions in the GaN was inferred, which we attribute to a fixed net positive charge density of magnitude 4.60 x 10{sup 12 }cm{sup -2} at the Al{sub 2}O{sub 3}/GaN interface. We provide hypotheses to explain the origin of this charge by analyzing the energy band line-up.},
doi = {10.1063/1.3645616},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 99,
place = {United States},
year = {2011},
month = {9}
}