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Title: Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film

Abstract

We studied the photoluminescence of ZnMgO thin film, grown by the radiofrequency sputtering method, as a function of excitation intensity and temperature. As the excitation intensity increases, a nonlinear emission band caused by the radiative recombination of the inelastic exciton-exciton scattering was detected at low temperature. We found that the inelastic exciton-exciton scattering process can only persist up to T {approx} 260 K. The nonlinear emission band observed at room temperature is due to the radiative recombination of the electron-hole plasma.

Authors:
; ;  [1]
  1. Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, Taiwan (China)
Publication Date:
OSTI Identifier:
22027754
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 13; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CRYSTAL GROWTH; DEPOSITION; EXCITATION; EXCITONS; HOLES; INELASTIC SCATTERING; MAGNESIUM; NONLINEAR PROBLEMS; PHOTOLUMINESCENCE; RADIOWAVE RADIATION; RECOMBINATION; SEMICONDUCTOR MATERIALS; SOLID-STATE PLASMA; SPUTTERING; TEMPERATURE DEPENDENCE; THIN FILMS

Citation Formats

Chia, C. H., Chen, J. N., and Hu, Y. M. Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film. United States: N. p., 2011. Web. doi:10.1063/1.3646116.
Chia, C. H., Chen, J. N., & Hu, Y. M. Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film. United States. doi:10.1063/1.3646116.
Chia, C. H., Chen, J. N., and Hu, Y. M. Mon . "Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film". United States. doi:10.1063/1.3646116.
@article{osti_22027754,
title = {Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film},
author = {Chia, C. H. and Chen, J. N. and Hu, Y. M.},
abstractNote = {We studied the photoluminescence of ZnMgO thin film, grown by the radiofrequency sputtering method, as a function of excitation intensity and temperature. As the excitation intensity increases, a nonlinear emission band caused by the radiative recombination of the inelastic exciton-exciton scattering was detected at low temperature. We found that the inelastic exciton-exciton scattering process can only persist up to T {approx} 260 K. The nonlinear emission band observed at room temperature is due to the radiative recombination of the electron-hole plasma.},
doi = {10.1063/1.3646116},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 99,
place = {United States},
year = {2011},
month = {9}
}