Photoluminescence due to inelastic exciton-exciton scattering in ZnMgO-alloy thin film

Journal Article · Mon Sep 26 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3646116· OSTI ID:22027754

Chia, C H; Chen, J N; Hu, Y M ^[1]

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1. Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, Taiwan (China)

We studied the photoluminescence of ZnMgO thin film, grown by the radiofrequency sputtering method, as a function of excitation intensity and temperature. As the excitation intensity increases, a nonlinear emission band caused by the radiative recombination of the inelastic exciton-exciton scattering was detected at low temperature. We found that the inelastic exciton-exciton scattering process can only persist up to T {approx} 260 K. The nonlinear emission band observed at room temperature is due to the radiative recombination of the electron-hole plasma.

• OSTI ID: 22027754
• Journal Information: Applied Physics Letters, Vol. 99, Issue 13; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
CRYSTAL GROWTH
DEPOSITION
EXCITATION
EXCITONS
HOLES
INELASTIC SCATTERING
MAGNESIUM
NONLINEAR PROBLEMS
PHOTOLUMINESCENCE
RADIOWAVE RADIATION
RECOMBINATION
SEMICONDUCTOR MATERIALS
SOLID-STATE PLASMA
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS