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Title: Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc

Abstract

The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu{sub 3}Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu{sub 3}Si nucleation sites as the film was annealed at 270 deg. C. After heating to 500 deg. C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4x BD-R with the bottom jitter values below 6.5%.

Authors:
; ;  [1];  [2]; ;  [3]; ;  [4]
  1. Departmant of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taipei 243, Taiwan (China)
  3. CMC Magnetics Corporation, Taoyuan 333, Taiwan (China)
  4. Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan (China)
Publication Date:
OSTI Identifier:
22027746
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 12; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COPPER SILICIDES; CRYSTALLIZATION; CUBIC LATTICES; DEPOSITION; GRAIN SIZE; HEATING; INTERFACES; LAYERS; NUCLEATION; SILICON; SPUTTERING; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; THIN FILMS

Citation Formats

Ou, Sin-Liang, Kuo, Po-Cheng, Tsai, Tsung-Lin, Chen, Sheng-Chi, Yeh, Chin-Yen, Chang, Han-Feng, Lee, Chao-Te, and Chiang, Donyau. Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc. United States: N. p., 2011. Web. doi:10.1063/1.3641417.
Ou, Sin-Liang, Kuo, Po-Cheng, Tsai, Tsung-Lin, Chen, Sheng-Chi, Yeh, Chin-Yen, Chang, Han-Feng, Lee, Chao-Te, & Chiang, Donyau. Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc. United States. doi:10.1063/1.3641417.
Ou, Sin-Liang, Kuo, Po-Cheng, Tsai, Tsung-Lin, Chen, Sheng-Chi, Yeh, Chin-Yen, Chang, Han-Feng, Lee, Chao-Te, and Chiang, Donyau. Mon . "Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc". United States. doi:10.1063/1.3641417.
@article{osti_22027746,
title = {Crystallization mechanisms and recording characteristics of Si/CuSi bilayer for write-once blu-ray disc},
author = {Ou, Sin-Liang and Kuo, Po-Cheng and Tsai, Tsung-Lin and Chen, Sheng-Chi and Yeh, Chin-Yen and Chang, Han-Feng and Lee, Chao-Te and Chiang, Donyau},
abstractNote = {The crystallization mechanisms of Si/CuSi bilayer and its recording characteristics for write-once blu-ray disc (BD-R) were investigated. It was found that Cu{sub 3}Si phase appeared during the room temperature sputtered deposition. Then, the Si atoms in CuSi layer segregated and crystallized to cubic Si in Cu{sub 3}Si nucleation sites as the film was annealed at 270 deg. C. After heating to 500 deg. C, the grains size of cubic Si phase grew and the hexagonal Si phase was observed. The dynamic tests show that the Si/CuSi bilayer has great feasibility for 1-4x BD-R with the bottom jitter values below 6.5%.},
doi = {10.1063/1.3641417},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 12,
volume = 99,
place = {United States},
year = {2011},
month = {9}
}