Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, Warsaw 01-142 (Poland)
- Leibniz Institute for Crystal Growth, Max-Born Strasse 2, Berlin 12489 (Germany)
We study the mismatch relaxation of 2-5 nm thin elongated AlN islands formed during growth of AlGaN on bulk m-plane GaN by molecular beam epitaxy. The relaxation of these m-plane AlN layers is anisotropic and occurs through the introduction of stacking faults in [0001] planes during island coalescence, while no relaxation is observed along the perpendicular [1120] direction. This anisotropy in the mismatch relaxation and the formation of stacking faults in the AlN islands are explained by the growth mode of the AlN platelets and their coalescence along the [0001] direction.
- OSTI ID:
- 22027703
- Journal Information:
- Applied Physics Letters, Vol. 99, Issue 6; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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