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Title: Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

Abstract

Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 x 10{sup 19} cm{sup -3}).

Authors:
 [1];  [1];  [2]
  1. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22027696
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 5; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; ANNEALING; CARRIER DENSITY; CARRIER MOBILITY; DEPOSITION; ELECTRIC CONDUCTIVITY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; OPACITY; OXYGEN; POLYMERS; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; TEXTURE; THIN FILMS; ZINC OXIDES

Citation Formats

Gadre, Mandar J., Alford, T. L., and Flexible Display Center at Arizona State University, Tempe, Arizona 85284. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals. United States: N. p., 2011. Web. doi:10.1063/1.3619196.
Gadre, Mandar J., Alford, T. L., & Flexible Display Center at Arizona State University, Tempe, Arizona 85284. Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals. United States. doi:10.1063/1.3619196.
Gadre, Mandar J., Alford, T. L., and Flexible Display Center at Arizona State University, Tempe, Arizona 85284. Mon . "Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals". United States. doi:10.1063/1.3619196.
@article{osti_22027696,
title = {Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals},
author = {Gadre, Mandar J. and Alford, T. L. and Flexible Display Center at Arizona State University, Tempe, Arizona 85284},
abstractNote = {Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 x 10{sup 19} cm{sup -3}).},
doi = {10.1063/1.3619196},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 5,
volume = 99,
place = {United States},
year = {2011},
month = {8}
}