Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals

Journal Article · Mon Aug 01 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3619196· OSTI ID:22027696

Gadre, Mandar J ^[1]; Alford, T L ^[1]

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1. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona 85287 (United States)

Amorphous indium gallium zinc oxide (a-IGZO) thin films of the highest transmittance reported in literature were initially deposited onto flexible polymer substrates at room temperature. The films were annealed in vacuum, air, and oxygen to enhance their electrical and optical performances. Electrical and optical characterizations were done before and after anneals. A partial reversal of the degradation in electrical properties upon annealing in oxygen was achieved by subjecting the films to subsequent vacuum anneals. A model was developed based on film texture and structural defects which showed close agreement between the measured and calculated carrier mobility values at low carrier concentrations (2-6 x 10{sup 19} cm{sup -3}).

• OSTI ID: 22027696
• Journal Information: Applied Physics Letters, Vol. 99, Issue 5; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANNEALING
CARRIER DENSITY
CARRIER MOBILITY
DEPOSITION
ELECTRIC CONDUCTIVITY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
OPACITY
OXYGEN
POLYMERS
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
TEXTURE
THIN FILMS
ZINC OXIDES