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Title: Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics

Abstract

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Authors:
 [1]; ; ;  [2]; ;  [3];  [4];  [1]
  1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  2. Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium)
  3. Katholieke Universiteit Leuven, 3001 Leuven (Belgium)
  4. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
Publication Date:
OSTI Identifier:
22027694
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 4; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPACITANCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ENERGY-LEVEL DENSITY; FERMI LEVEL; GALLIUM ARSENIDES; HAFNIUM OXIDES; INDIUM PHOSPHIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; PASSIVATION; PERMITTIVITY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SURFACES; THICKNESS

Citation Formats

Chu, L K, Katholieke Universiteit Leuven, 3001 Leuven, Merckling, C, Dekoster, J, Caymax, M, Alian, A, Heyns, M, Interuniversity Microelectronics Center, Kwo, J, Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan, and Hong, M. Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics. United States: N. p., 2011. Web. doi:10.1063/1.3617436.
Chu, L K, Katholieke Universiteit Leuven, 3001 Leuven, Merckling, C, Dekoster, J, Caymax, M, Alian, A, Heyns, M, Interuniversity Microelectronics Center, Kwo, J, Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan, & Hong, M. Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics. United States. doi:10.1063/1.3617436.
Chu, L K, Katholieke Universiteit Leuven, 3001 Leuven, Merckling, C, Dekoster, J, Caymax, M, Alian, A, Heyns, M, Interuniversity Microelectronics Center, Kwo, J, Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan, and Hong, M. Mon . "Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics". United States. doi:10.1063/1.3617436.
@article{osti_22027694,
title = {Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics},
author = {Chu, L K and Katholieke Universiteit Leuven, 3001 Leuven and Merckling, C and Dekoster, J and Caymax, M and Alian, A and Heyns, M and Interuniversity Microelectronics Center and Kwo, J and Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan and Hong, M},
abstractNote = {We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.},
doi = {10.1063/1.3617436},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 4,
volume = 99,
place = {United States},
year = {2011},
month = {7}
}