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Title: Hot electron transmission in metals using epitaxial NiSi{sub 2}/n-Si(111) interfaces

Abstract

We have investigated hot electron transmission across epitaxial metal-disilicide/n-Si(111) interfaces using ballistic electron emission microscopy (BEEM). Different crystal orientations of epitaxial NiSi{sub 2} were grown on a Si(111) substrate using molecular beam epitaxy. The presence of different interfaces of NiSi{sub 2} on Si(111) were confirmed by high resolution transmission electron microscopy. Electrical transport measurements reveal a clear rectifying Schottky interface with a barrier height of 0.69 eV. However, using BEEM, three different regions with different transmissions and Schottky barrier heights of 0.65 eV, 0.78 eV, and 0.71 eV are found. The addition of a thin Ni film on the NiSi{sub 2} layer strongly reduces the transmission in all the three regions and interestingly, almost equalizes the transmission across them.

Authors:
; ; ;  [1]; ;  [2];  [3]
  1. Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen (Netherlands)
  2. Surfaces and Thin Films, Zernike Institute for Advanced Materials, University of Groningen (Netherlands)
  3. Nanostructured Materials and Interfaces, Zernike Institute for Advanced Materials, University of Groningen (Netherlands)
Publication Date:
OSTI Identifier:
22027682
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 99; Journal Issue: 3; Other Information: (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON EMISSION; ELECTRONS; EV RANGE; FIELD EMISSION; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; NICKEL; NICKEL SILICIDES; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Parui, S., Wit, B., Wees, B. J. van, Banerjee, T., Bignardi, L., Rudolf, P., and Kooi, B.. Hot electron transmission in metals using epitaxial NiSi{sub 2}/n-Si(111) interfaces. United States: N. p., 2011. Web. doi:10.1063/1.3610458.
Parui, S., Wit, B., Wees, B. J. van, Banerjee, T., Bignardi, L., Rudolf, P., & Kooi, B.. Hot electron transmission in metals using epitaxial NiSi{sub 2}/n-Si(111) interfaces. United States. doi:10.1063/1.3610458.
Parui, S., Wit, B., Wees, B. J. van, Banerjee, T., Bignardi, L., Rudolf, P., and Kooi, B.. Mon . "Hot electron transmission in metals using epitaxial NiSi{sub 2}/n-Si(111) interfaces". United States. doi:10.1063/1.3610458.
@article{osti_22027682,
title = {Hot electron transmission in metals using epitaxial NiSi{sub 2}/n-Si(111) interfaces},
author = {Parui, S. and Wit, B. and Wees, B. J. van and Banerjee, T. and Bignardi, L. and Rudolf, P. and Kooi, B.},
abstractNote = {We have investigated hot electron transmission across epitaxial metal-disilicide/n-Si(111) interfaces using ballistic electron emission microscopy (BEEM). Different crystal orientations of epitaxial NiSi{sub 2} were grown on a Si(111) substrate using molecular beam epitaxy. The presence of different interfaces of NiSi{sub 2} on Si(111) were confirmed by high resolution transmission electron microscopy. Electrical transport measurements reveal a clear rectifying Schottky interface with a barrier height of 0.69 eV. However, using BEEM, three different regions with different transmissions and Schottky barrier heights of 0.65 eV, 0.78 eV, and 0.71 eV are found. The addition of a thin Ni film on the NiSi{sub 2} layer strongly reduces the transmission in all the three regions and interestingly, almost equalizes the transmission across them.},
doi = {10.1063/1.3610458},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 99,
place = {United States},
year = {2011},
month = {7}
}