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Title: Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition

Abstract

High {kappa} dielectric of HfAlO/HfO{sub 2} was an in-situ atomic-layer-deposited directly on molecular beam epitaxy grown In{sub 0.53}Ga{sub 0.47}As surface without using pre-treatments or interfacial passivation layers, where HfAlO (HfO{sub 2}:Al{sub 2}O{sub 3} {approx} 4:1) with high re-crystallization temperature was employed as the top oxide layer. The HfAlO ({approx}4.5 nm)/HfO{sub 2} (0.8 nm)/In{sub 0.53}Ga{sub 0.47}As metal oxide semiconductor capacitors have exhibited an oxide/In{sub 0.53}Ga{sub 0.47}As interface free of arsenic-related defective bonding, thermodynamic stability at 800 deg. C, and low leakage current densities of <10{sup -7} A/cm{sup 2} at {+-}1 MV/cm. The interfacial trap density (D{sub it}) spectra in absence of mid-gap peaks were obtained by temperature-dependent capacitance and conductance with D{sub it}'s of 2-3 x 10{sup 12} eV{sup -1} cm{sup -2} below and 6-12 x 10{sup 11} eV{sup -1} cm{sup -2} above the mid-gap of In{sub 0.53}Ga{sub 0.47}As, respectively. An equivalent oxide thickness of less than 1 nm has been achieved by reducing the HfAlO thickness to {approx}2.7 nm with the same initial HfO{sub 2} thickness of {approx}0.8 nm.

Authors:
;  [1];  [2]; ; ;  [3];  [3]
  1. Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China)
  2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
  3. Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China)
Publication Date:
OSTI Identifier:
22025529
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 100; Journal Issue: 17; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPACITANCE; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY BEAM DEPOSITION; GALLIUM ARSENIDES; HAFNIUM OXIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; LEAKAGE CURRENT; MOLECULAR BEAM EPITAXY; RECRYSTALLIZATION; SEMICONDUCTOR MATERIALS; SILICON OXIDES; TEMPERATURE DEPENDENCE; THICKNESS; THIN FILMS

Citation Formats

Lin, T D, Hong, M, Chang, Y H, Lin, C A, Huang, M L, Lee, W C, Kwo, J, and Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan. Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition. United States: N. p., 2012. Web. doi:10.1063/1.4706261.
Lin, T D, Hong, M, Chang, Y H, Lin, C A, Huang, M L, Lee, W C, Kwo, J, & Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan. Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition. United States. doi:10.1063/1.4706261.
Lin, T D, Hong, M, Chang, Y H, Lin, C A, Huang, M L, Lee, W C, Kwo, J, and Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan. Mon . "Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition". United States. doi:10.1063/1.4706261.
@article{osti_22025529,
title = {Realization of high-quality HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As by in-situ atomic-layer-deposition},
author = {Lin, T D and Hong, M and Chang, Y H and Lin, C A and Huang, M L and Lee, W C and Kwo, J and Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan},
abstractNote = {High {kappa} dielectric of HfAlO/HfO{sub 2} was an in-situ atomic-layer-deposited directly on molecular beam epitaxy grown In{sub 0.53}Ga{sub 0.47}As surface without using pre-treatments or interfacial passivation layers, where HfAlO (HfO{sub 2}:Al{sub 2}O{sub 3} {approx} 4:1) with high re-crystallization temperature was employed as the top oxide layer. The HfAlO ({approx}4.5 nm)/HfO{sub 2} (0.8 nm)/In{sub 0.53}Ga{sub 0.47}As metal oxide semiconductor capacitors have exhibited an oxide/In{sub 0.53}Ga{sub 0.47}As interface free of arsenic-related defective bonding, thermodynamic stability at 800 deg. C, and low leakage current densities of <10{sup -7} A/cm{sup 2} at {+-}1 MV/cm. The interfacial trap density (D{sub it}) spectra in absence of mid-gap peaks were obtained by temperature-dependent capacitance and conductance with D{sub it}'s of 2-3 x 10{sup 12} eV{sup -1} cm{sup -2} below and 6-12 x 10{sup 11} eV{sup -1} cm{sup -2} above the mid-gap of In{sub 0.53}Ga{sub 0.47}As, respectively. An equivalent oxide thickness of less than 1 nm has been achieved by reducing the HfAlO thickness to {approx}2.7 nm with the same initial HfO{sub 2} thickness of {approx}0.8 nm.},
doi = {10.1063/1.4706261},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 17,
volume = 100,
place = {United States},
year = {2012},
month = {4}
}