Improved photoresponsivity of semiconducting BaSi{sub 2} epitaxial films grown on a tunnel junction for thin-film solar cells

Journal Article · Mon Apr 09 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3703585· OSTI ID:22025514

Du, Weijie; Suzuno, Mitsushi; Ajmal Khan, M; Toh, Katsuaki; Baba, Masakazu; Nakamura, Kotaro; Toko, Kaoru ^[1]; Usami, Noritaka ^[2]; Suemasu, Takashi ^[1]

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1. Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573 (Japan)
2. Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577 (Japan)

The highest photoresponsivity and an internal quantum efficiency exceeding 70% at 1.55 eV were achieved for 400 nm thick undoped n-type BaSi{sub 2} epitaxial layers formed on a n{sup +}-BaSi{sub 2}/p{sup +}-Si tunnel junction (TJ) on Si(111). The diffusion of Sb atoms was effectively suppressed by an intermediate polycrystalline Si layer grown by solid phase epitaxy, located between the TJ and undoped BaSi{sub 2} layers.

• OSTI ID: 22025514
• Journal Information: Applied Physics Letters, Vol. 100, Issue 15; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ANTIMONY
BARIUM COMPOUNDS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFUSION
EV RANGE
LAYERS
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
POLYCRYSTALS
QUANTUM EFFICIENCY
SEMICONDUCTOR MATERIALS
SILICIDES
SILICON
SILICON SOLAR CELLS
SUPERCONDUCTING JUNCTIONS
THIN FILMS
TUNNEL EFFECT