GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy
Abstract
We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.
- Authors:
-
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven 5612 AZ (Netherlands)
- Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
- Publication Date:
- OSTI Identifier:
- 22025503
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 100; Journal Issue: 14; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; DIFFUSION; DISLOCATIONS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; INTERFACES; LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR CLUSTERS; MORPHOLOGY; QUANTUM DOTS; RELAXATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; STRAINS
Citation Formats
Smakman, E P, Garleff, J K, Rambabu, P, Koenraad, P M, Young, R J, and Hayne, M. GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. United States: N. p., 2012.
Web. doi:10.1063/1.3701614.
Smakman, E P, Garleff, J K, Rambabu, P, Koenraad, P M, Young, R J, & Hayne, M. GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy. United States. https://doi.org/10.1063/1.3701614
Smakman, E P, Garleff, J K, Rambabu, P, Koenraad, P M, Young, R J, and Hayne, M. 2012.
"GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy". United States. https://doi.org/10.1063/1.3701614.
@article{osti_22025503,
title = {GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy},
author = {Smakman, E P and Garleff, J K and Rambabu, P and Koenraad, P M and Young, R J and Hayne, M},
abstractNote = {We present a cross-sectional scanning tunneling microscopy study of GaSb/GaAs quantum dots grown by molecular beam epitaxy. Various nanostructures are observed as a function of the growth parameters. During growth, relaxation of the high local strain fields of the nanostructures plays an important role in their formation. Pyramidal dots with a high Sb content are often accompanied by threading dislocations above them. GaSb ring formation is favored by the use of a thin GaAs first cap layer and a high growth temperature of the second cap layer. At these capping conditions, strain-driven Sb diffusion combined with As/Sb exchange and Sb segregation remove the center of a nanostructure, creating a ring. Clusters of GaSb without a well defined morphology also appear regularly, often with a highly inhomogeneous structure which is sometimes divided up in fragments.},
doi = {10.1063/1.3701614},
url = {https://www.osti.gov/biblio/22025503},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 100,
place = {United States},
year = {Mon Apr 02 00:00:00 EDT 2012},
month = {Mon Apr 02 00:00:00 EDT 2012}
}