Luminescence properties of SiO{sub x}N{sub y} irradiated by IR laser 808 nm: The role of Si quantum dots and Si chemical environment

Journal Article · Mon Jan 23 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3679395· OSTI ID:22025415

Ruggeri, Rosa; Neri, Fortunato ^[1]; Sciuto, Antonella; Privitera, Vittorio; Spinella, Corrado; Mannino, Giovanni ^[2]

---

1. Dipartimento di Fisica della Materia e Ingegneria Elettronica, Universita di Messina, Salita, Sperone 31, 98166 Messina (Italy)
2. CNR-IMM, Strada VIII no 5, Zona Industriale, 95121 Catania (Italy)

We investigated optical, structural, and chemical properties of SiO{sub x}N{sub y} layers irradiated by CW IR laser during a time lapse of few milliseconds. We observed tunable photoluminescence signal at room temperature in the range 750-950 nm, without Si/SiO{sub 2} phase separation, depending on the IR laser power irradiation. Furthermore, no photoluminescence signal was recorded when the IR laser power density was high enough to promote phase separation forming Si quantum dots. By chemical analysis the source of the luminescence signal has been identified in a change of silicon chemical environment induced by IR laser annealing inside the amorphous matrix.

• OSTI ID: 22025415
• Journal Information: Applied Physics Letters, Vol. 100, Issue 4; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
AMORPHOUS STATE
ANNEALING
CHEMICAL PROPERTIES
INFRARED RADIATION
IRRADIATION
LASER RADIATION
LAYERS
MATRIX MATERIALS
PHOTOLUMINESCENCE
POWER DENSITY
QUANTUM DOTS
SILICON
SILICON NITRIDES
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS