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Title: Structure and transport behavior of In-filled cobalt rhodium antimonide skutterudites

Abstract

The effect of indium icosahedral void-site filling on the transport properties of cobalt and rhodium antimonide solid solutions is investigated. Co{sub 4-x}Rh{sub x}Sb{sub 12} and indium-filled In{sub 0.1}Co{sub 4-x}Rh{sub x}Sb{sub 12} solid solutions were synthesized. Partial rhodium substitution produces a distinct clustering-induced lattice strain that is partly relieved upon indium substitution into the skutterudite icosahedral void-sites. Indium lowers the thermal conductivity of all samples near room temperature. A distinct increase in thermal conductivity is observed in all indium-filled rhodium substituted samples at elevated temperatures and is attributed to bipolar thermal conductivity. In addition, the indium-filled samples were subjected to a 6-day heat treatment at 673 K. Void-site filled indium was found to be metastable at this temperature, and was found to partially precipitate during the 6-day heat treatment; thereby presenting concerns over the long-term stability of thermoelectric devices based on indium-filled skutterudites. - Graphical Abstract: Strain in the cobalt rhodium skutterudite solid solutions decreases upon indium filling. Highlights: Black-Right-Pointing-Pointer Unfilled and indium-filled cobalt and rhodium skutterudite solid solutions were synthesized. Black-Right-Pointing-Pointer Indium filling stabilizes the cobalt and rhodium skutterudite solid solutions. Black-Right-Pointing-Pointer The thermoelectric properties of all compositions are reported. Black-Right-Pointing-Pointer The thermal conductivity of rhodium-rich compositions is strongly affectedmore » by indium filling. Black-Right-Pointing-Pointer Void-site filled indium was found to be metastable.« less

Authors:
 [1]; ; ;  [1]
  1. Department of Chemistry, Oregon State University, Corvallis, OR 97331 (United States)
Publication Date:
OSTI Identifier:
22012154
Resource Type:
Journal Article
Journal Name:
Journal of Solid State Chemistry
Additional Journal Information:
Journal Volume: . 190; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0022-4596
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ALLOYS; COBALT; COMPOSITE MATERIALS; HEAT TREATMENTS; INDIUM; NANOSTRUCTURES; RHODIUM; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS; STABILITY; THERMAL CONDUCTIVITY; THERMOELECTRIC PROPERTIES

Citation Formats

Eilertsen, James, School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis, OR 97331, Berthelot, Romain, Sleight, Arthur W, and Subramanian, M A. Structure and transport behavior of In-filled cobalt rhodium antimonide skutterudites. United States: N. p., 2012. Web. doi:10.1016/J.JSSC.2012.02.045.
Eilertsen, James, School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis, OR 97331, Berthelot, Romain, Sleight, Arthur W, & Subramanian, M A. Structure and transport behavior of In-filled cobalt rhodium antimonide skutterudites. United States. https://doi.org/10.1016/J.JSSC.2012.02.045
Eilertsen, James, School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis, OR 97331, Berthelot, Romain, Sleight, Arthur W, and Subramanian, M A. Fri . "Structure and transport behavior of In-filled cobalt rhodium antimonide skutterudites". United States. https://doi.org/10.1016/J.JSSC.2012.02.045.
@article{osti_22012154,
title = {Structure and transport behavior of In-filled cobalt rhodium antimonide skutterudites},
author = {Eilertsen, James and School of Mechanical, Industrial, and Manufacturing Engineering, Oregon State University, Corvallis, OR 97331 and Berthelot, Romain and Sleight, Arthur W and Subramanian, M A},
abstractNote = {The effect of indium icosahedral void-site filling on the transport properties of cobalt and rhodium antimonide solid solutions is investigated. Co{sub 4-x}Rh{sub x}Sb{sub 12} and indium-filled In{sub 0.1}Co{sub 4-x}Rh{sub x}Sb{sub 12} solid solutions were synthesized. Partial rhodium substitution produces a distinct clustering-induced lattice strain that is partly relieved upon indium substitution into the skutterudite icosahedral void-sites. Indium lowers the thermal conductivity of all samples near room temperature. A distinct increase in thermal conductivity is observed in all indium-filled rhodium substituted samples at elevated temperatures and is attributed to bipolar thermal conductivity. In addition, the indium-filled samples were subjected to a 6-day heat treatment at 673 K. Void-site filled indium was found to be metastable at this temperature, and was found to partially precipitate during the 6-day heat treatment; thereby presenting concerns over the long-term stability of thermoelectric devices based on indium-filled skutterudites. - Graphical Abstract: Strain in the cobalt rhodium skutterudite solid solutions decreases upon indium filling. Highlights: Black-Right-Pointing-Pointer Unfilled and indium-filled cobalt and rhodium skutterudite solid solutions were synthesized. Black-Right-Pointing-Pointer Indium filling stabilizes the cobalt and rhodium skutterudite solid solutions. Black-Right-Pointing-Pointer The thermoelectric properties of all compositions are reported. Black-Right-Pointing-Pointer The thermal conductivity of rhodium-rich compositions is strongly affected by indium filling. Black-Right-Pointing-Pointer Void-site filled indium was found to be metastable.},
doi = {10.1016/J.JSSC.2012.02.045},
url = {https://www.osti.gov/biblio/22012154}, journal = {Journal of Solid State Chemistry},
issn = {0022-4596},
number = ,
volume = . 190,
place = {United States},
year = {2012},
month = {6}
}