Microwave-assisted hydrothermally grown epitaxial ZnO films on Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket MgAl{sub 2}O{sub 4} substrate

Journal Article · Tue May 15 00:00:00 EDT 2012 · Journal of Solid State Chemistry

DOI:https://doi.org/10.1016/J.JSSC.2011.11.021· OSTI ID:22012110

Liew, Laura-Lynn ^[1]; Goh, Gregory K.L. ^[1]

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1. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link Singapore 117602 (Singapore)

In this report, epitaxial ZnO films were grown on Left-Pointing-Angle-Bracket 1 1 1 Right-Pointing-Angle-Bracket MgAl{sub 2}O{sub 4} single crystal substrates using Microwave Assisted Hydrothermal (MAH) method with microwave radiation heating (2.45 GHz) at 90 Degree-Sign C in a short time (within 15 min). Scanning electron microscopy confirms that these films possess smooth surface morphology with fully coalesced grains. In addition, photoluminescence (PL) measurements exhibit strong ultraviolet emission at room temperature, indicating potential applications for short-wave light-emitting photonic devices. The PL properties were improved by a thermal annealing process without generating structural defects. Hall measurements after thermal treatment show the carrier concentration to be of the order of 10{sup 19} cm{sup -3} which is comparable to those grown by conventional solution methods. The MAH method will offer a rapid route to synthesize epitaxial ZnO films with good optical and electrical properties for various applications. - Graphical abstract: FESEM images showing the morphology and cross sectional view of ZnO films grown using microwave assisted hydrothermal method at 90 Degree-Sign C for 30 min. Highlights: Black-Right-Pointing-Pointer Microwave Assisted Hydrothermal (MAH) method was introduced to synthesize epitaxial ZnO films. Black-Right-Pointing-Pointer The films possess smooth surface morphology, fully coalesced grains with high optical properties. Black-Right-Pointing-Pointer It exhibit good electrical properties (carrier concentration 10{sup 19} cm{sup -3}, mobility 19 cm{sup 2}/Vs).

• OSTI ID: 22012110
• Journal Information: Journal of Solid State Chemistry, Vol. . 189; Conference: 6. international conference on materials for advanced technologies,, Singapore (Singapore), 26 Jun - 1 Jul 2011; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
DEFECTS
ELECTRICAL PROPERTIES
EPITAXY
FILMS
HEATING
HYDROTHERMAL SYNTHESIS
MICROWAVE RADIATION
MOBILITY
MONOCRYSTALS
MORPHOLOGY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
ZINC OXIDES