Synthesis and characterisation of magnetic iron sulfide nanocrystals
- School of Chemical and Physical Sciences and MacDiarmid Institute of Advanced Materials and Nanotechnology, Victoria University of Wellington, P.O. Box 600, Wellington (New Zealand)
Fe{sub 1-x}S and Fe{sub 3}S{sub 4} nanocrystals with a variety of morphologies and average sizes were synthesised by the reaction of iron(II) acetylacetonate (Fe(acac){sub 2}) and elemental sulfur in oleylamine. Reaction at 200 Degree-Sign C for 240 min produced extremely thin Fe{sub 3}S{sub 4} sheets, which displayed low coercivities (14 kA m{sup -1}) suggestive of pseudosingle-domain or multidomain particles. Reaction temperatures {>=}300 Degree-Sign C for 30 min produced 70 nm Fe{sub 1-x}S nanocrystals with hexagonal plate and hexagonal prism morphologies, which displayed high magnetic coercivities (110 kA m{sup -1}) characteristic of single magnetic domain particles. Rapid injection of sulfur solution at 280 Degree-Sign C followed by immediate cooling produced a mixture of Fe{sub 1-x}S nanocrystals and spherical, polydisperse {approx}5 nm Fe{sub 3}S{sub 4} nanocrystals, which displayed superparamagnetism above an average blocking temperature of 55 K. - Graphical abstract: Reaction of Fe(acac){sub 2} and sulfur in oleylamine produces Fe{sub 3}S{sub 4} nanocrystals at 200 Degree-Sign C and Fe{sub 1-x}S nanocrystals at 310 Degree-Sign C. Highlights: Black-Right-Pointing-Pointer Synthesis of Fe{sub 1-x}S and Fe{sub 3}S{sub 4} nanocrystals from Fe(acac){sub 2} and sulfur. Black-Right-Pointing-Pointer Fe{sub 3}S{sub 4} sheets formed after 4 h at 200 Degree-Sign C. Black-Right-Pointing-Pointer Fe{sub 1-x}S nanocrystals formed above 200 Degree-Sign C. Black-Right-Pointing-Pointer Five nanometre Fe{sub 3}S{sub 4} formed by rapid injection. Black-Right-Pointing-Pointer Five nanometre Fe{sub 3}S{sub 4} nanocrystals superparamagnetic above blocking temperature of 55 K.
- OSTI ID:
- 22012104
- Journal Information:
- Journal of Solid State Chemistry, Vol. . 189; Conference: 6. international conference on materials for advanced technologies,, Singapore (Singapore), 26 Jun - 1 Jul 2011; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
- Country of Publication:
- United States
- Language:
- English
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