Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al{sub 0.35}Ga{sub 0.65}As:Be quantum wells

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608030135· OSTI ID:22004910

Averkiev, N S; Ivanov, Yu L; Krasivichev, A A; Petrov, P V; Sedov, V E ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

The photoluminescence (PL) of GaAs/Al{sub 0.35}Ga{sub 0.65}As:Be quantum wells is studied at temperatures of 77 and 300 K under conditions of uniaxial compression along the [110] direction. There are two main lines in the PL spectra; at zero pressure and T = 77 K, the peaks appear at 1.517 and 1.532 eV. Comparison of the pressure dependences of the peak positions and the polarization of the PL measured experimentally with those calculated theoretically gives evidence that, at T {>=} 77 K, these bands originate from the recombination of free electrons with heavy and light holes in the GaAs valence band.

• OSTI ID: 22004910
• Journal Information: Semiconductors, Vol. 42, Issue 3; Other Information: Copyright (c) 2008 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHOTOLUMINESCENCE
POLARIZATION
PRESSURE DEPENDENCE
QUANTUM WELLS
RECOMBINATION
SPECTRA